Abstract:Spin-transfer torque random access memory (STT-RAM) is a promising nonvolatile memory technology aiming on-chip or embedded applications. In recent years, many researches have been conducted to improve the storage density and enhance the scalability of STT-RAM, such as reducing the write current and switching time of magnetic tunneling junction (MTJ) devices. In parallel with these efforts, the continuous increasing of tunnel magneto-resistance(TMR) ratio of the MTJ inspires the development of multi-level cell (MLC) STT-RAM, which allows multiple data bits be stored in a single memory cell. Two types of MLC STT-RAM cells, namely, parallel MLC and series MLC, were also proposed. The storage margin of a MLC STT-RAM cell, i.e., the distinction between the lowest and highest resistance states, is partitioned into multiple segments for multi-level data representation. As a result, the performance and reliability of MLC STT-RAM cells become more sensitive to the MOS and MTJ device variations and the thermal-induced randomness of MTJ switching. In this work, we systematically analyze the variation sources of MLC STT-RAM designs and their impacts on the reliability of the read and write operations. On top of that, we also discuss the optimal device parameters of the MLC MTJ for the minimization of the operation error rate of the MLC STT-RAM cells from statistical design perspective. Our simulation results show that under the current available technology, series MLC STT-RAM demonstrates overwhelming benefits in the read and write reliability compared to parallel MLC STT-RAM and could potentially satisfy the requirement of commercial practices.

RAM and TCAM Designs by Using STT-MRAM

Design of last-level on-chip cache using spin-torque transfer RAM (STT RAM)

Architectural Exploration to Enable Sufficient MTJ Device Write Margin for STT-RAM Based Cache

Persistent and Nonpersistent Error Optimization for STT-RAM Cell Design.

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Recent Progresses of Stt Memory Design and Applications

Spin-hall Assisted STT-RAM Design and Discussion

Enabling architectural innovations using non-volatile memory.

Spin-Transfer-Torque MRAM: the Next Revolution in Memory

Multi-level Cell STT-RAM: is It Realistic or Just a Dream?

3T2M Canted-Type X SOT-MRAM: Field-free, High-Energy-efficiency, and High-Read-margin Memory Toward Cache Applications

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An 8kb 40-Nm 2T2MTJ STT-MRAM Design with 2.6ns Access Time and Time-Adjustable Writing Process

A 5T-2MTJ STT-assisted Spin Orbit Torque based Ternary Content Addressable Memory for Hardware Accelerators

Probabilistic design methodology to improve run-time stability and performance of STT-RAM caches

Design Techniques to Improve the Device Write Margin for MRAM-based Cache Memory

An Architecture-Level Cache Simulation Framework Supporting Advanced PMA STT-MRAM

TriZone: A Design of MLC STT-RAM Cache for Combined Performance, Energy, and Reliability Optimizations

A Novel Architecture Of The 3d Stacked Mram L2 Cache For Cmps

Circuit and Microarchitecture Evaluation of 3D Stacking Magnetic RAM (MRAM) As a Universal Memory Replacement

Area-Aware Optimization of MRAM Crossbar Array Bit-Cell for In-Memory Computing