Abstract:Spin transfer torque magnetic random access memory (STT-MRAM) possesses many desirable properties such as nonvolatility, fast access speed, unlimited endurance, and good compatibility with CMOS fabrication process. ITRS has highlighted the potential of STT-MRAM as one of the candidates for the next-generation universal memory technology. However, both the behaviors of the Magnetic Tunnel Junction (MTJ) and the CMOS access transistor, which are two basic elements of STT-MRAM, are generally temperature dependent, threatening the reliability, and performance of STT-MRAM under thermal fluctuations. To investigate the reliability and performance of STT-MRAM under the temperature variation, we developed a thermal model for the perpendicular magnetic anisotropy MTJ device. With the developed model, thermal behaviors and performance of the hybrid MTJ/CMOS circuits can be characterized and thermal optimization techniques can then be studied. Afterward, a thermal-aware sensing circuit is proposed as a case study to exploit the thermal characteristics for improving STT-MRAM read reliability under the temperature variations. Our simulation results show that the proposed sensing circuit can distinctly reduce the read error rate under thermal fluctuations compared with the state-of-the-art designs.

Recent Progresses of Stt Memory Design and Applications

Advanced Low Power Spintronic Memories Beyond STT-MRAM

Spin-hall Assisted STT-RAM Design and Discussion

RAM and TCAM Designs by Using STT-MRAM

Persistent and Nonpersistent Error Optimization for STT-RAM Cell Design.

Experimental Demonstration of NAND-Like Spin-Torque Memory Unit

Spin-Transfer-Torque MRAM: the Next Revolution in Memory

Advanced Spin Orbit Torque Magnetic Random Access Memory with Field-Free Switching Schemes (Invited)

Spin Transfer Torque Memories and Logic Gates

Cross-Point Architecture for Spin-Transfer Torque Magnetic Random Access Memory

Design Considerations and Strategies for High-Reliable STT-MRAM

Spin-Transfer Torque Magnetic Memory As a Stochastic Memristive Synapse for Neuromorphic Systems

Optimal Design Of Ddr3 Stt-Mram Memory

Evaluation Of Ultrahigh-Speed Magnetic Memories Using Field-Free Spin-Orbit Torque

Design of last-level on-chip cache using spin-torque transfer RAM (STT RAM)

A 16 Kb Spin-Transfer Torque Random Access Memory with Self-Enable Switching and Precharge Sensing Schemes

Magnetic Memory (MRAM), a New Area for 2D and 3D SoC/SiP Design

Towards Spintronics Nonvolatile Caches

High Density Spin-Transfer Torque (STT)-MRAM Based on Cross-Point Architecture

Design of an Erasable Spintronics Memory Based on Current-Path-dependent Field-Free Spin Orbit Torque

Addressing the Thermal Issues of STT-MRAM from Compact Modeling to Design Techniques