Abstract:A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and energy-efficient write operation. Moreover, due to inherently differential device structure, fast and reliable read operation can be performed. Our simulation study shows 10X improvement in write energy over the standard 1T1R STT-MRAM memory cell, and 1.6X faster read operation compared to single-ended sensing (as in standard 1T1R STT-MRAMs). The bit-cell characteristics are promising for high performance on-chip memory applications.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the challenges faced by the existing standard 1T1R STT - MRAM (Spin - Transfer Torque Magnetoresistive Random - Access Memory) in high - performance on - chip memory applications, especially the performance and reliability issues in write and read operations. Specifically: 1. **High write current requirement**: In order to achieve high - speed writing, a large write current is required, which will exert severe stress on the tunneling oxide in the magnetic tunnel junction (MTJ), leading to reliability problems such as time - dependent dielectric breakdown (TDDB). Therefore, the upper limit of the MTJ voltage determines the maximum achievable write speed. 2. **Trade - off between reading and writing**: In order to prevent accidental writing (disturb - failures) during the reading process, when reducing the switching current, the read current must also be reduced, thereby increasing the sensing time and making the single - ended read operation slower. Therefore, it is difficult to achieve high - speed writing and reading simultaneously in the standard 1T1R STT - MRAM. To solve these problems, the author proposes a new device structure - DSTT - MRAM (Differential Spin - Transfer Torque MRAM based on the Spin Hall Effect), which uses the Spin Hall Effect to create a differential memory cell to achieve fast and energy - efficient write operations, and due to its inherent differential structure, can perform fast and reliable read operations. ### Main improvement points: - **Improved write energy efficiency**: Through the Spin Hall Effect, electrons can be scattered multiple times at the interface, thereby transferring angular momentum to the free layer multiple times, making the write energy approximately 10 times lower than that of the standard 1T1R STT - MRAM. - **Faster read speed**: The differential read structure allows for faster read operations, which are 1.6 times faster than single - ended sensing. - **No tunneling oxide stress**: The write current flows through the Spin Hall Metal (SHM) instead of the tunneling oxide, so a higher write current can be provided without affecting reliability. These improvements make DSTT - MRAM more suitable for high - performance on - chip memory applications.

DSTT-MRAM: Differential Spin Hall MRAM for On-chip Memories

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