Abstract:In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift–diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in synthetic antiferromagnets—a challenge that becomes more pronounced with device miniaturization. Although this miniaturization aims to enhance memory density, it inadvertently compromises data integrity. Parallel to this examination, our investigation of the interface exchange coupling within multilayer structures unveils critical insights into the efficacy and dependability of spintronic devices. We particularly scrutinize how exchange coupling, mediated by non-magnetic layers, influences the magnetic interplay between adjacent ferromagnetic layers, thereby affecting their magnetic stability and domain wall movements. This investigation is crucial for understanding the switching behavior in multi-layered structures. Our integrated methodology, which uses both charge and spin currents, demonstrates a comprehensive understanding of MRAM dynamics. It emphasizes the strategic optimization of exchange coupling to improve the performance of multi-layered spintronic devices. Such enhancements are anticipated to encourage improvements in data retention and the write/read speeds of memory devices. This research, thus, marks a significant leap forward in the refinement of high-capacity, high-performance memory technologies.

Spin-Transfer-Torque MRAM: the Next Revolution in Memory

Materials, Processes, Devices and Applications of Magnetoresistive Random Access Memory

High Density Spin-Transfer Torque (STT)-MRAM Based on Cross-Point Architecture

Magnonic spin-transfer torque MRAM with low power, high speed, and error-free switching

Cross-Point Architecture for Spin-Transfer Torque Magnetic Random Access Memory

Recent progresses in spin transfer torque-based magnetoresistive random access memory (STT-MRAM)

Advanced Low Power Spintronic Memories Beyond STT-MRAM

Thermoelectric Spin-Transfer Torque MRAM with Sub-Nanosecond Bi-Directional Writing using Magnonic Current

RAM and TCAM Designs by Using STT-MRAM

Spin-Transfer Versus Spin-Orbit Torque Mram

Recent Progresses of Stt Memory Design and Applications

Multi-level cell Spin Transfer Torque MRAM based on stochastic switching

Advanced Spin Orbit Torque Magnetic Random Access Memory with Field-Free Switching Schemes (Invited)

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Design Considerations and Strategies for High-Reliable STT-MRAM

Spintronics for Energy- Efficient Computing: An Overview and Outlook

A 16 Kb Spin-Transfer Torque Random Access Memory with Self-Enable Switching and Precharge Sensing Schemes

Spin-Transfer Torque Magnetic Memory As a Stochastic Memristive Synapse for Neuromorphic Systems

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

Field-Free 3T2SOT MRAM for Non-Volatile Cache Memories.

DSTT-MRAM: Differential Spin Hall MRAM for On-chip Memories