Abstract:Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers, such as magnetic insulators, antiferromagnets, and ferrimagnets. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.

Spin-orbit torques: Materials, physics, and devices

Recent Progress on Controlling Spin-Orbit Torques by Materials Design

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Spin-orbit Torques: Materials, Mechanisms, Performances, and Potential Applications

Roadmap of spin-orbit torques

Recent advances in spin-orbit torques: Moving towards device applications

Field-free Approaches for Deterministic Spin–orbit Torque Switching of the Perpendicular Magnet

Frontiers in all electrical control of magnetization by spin orbit torque

Spintronics for Energy- Efficient Computing: An Overview and Outlook

Switching of Perpendicular Magnetization by Spin-Orbit Torque

FMR-related phenomena in spintronic devices

Two-Dimensional Materials for Energy-Efficient Spin-Orbit Torque Devices

Magnetization Switching in van der Waals Systems by Spin-Orbit Torque

Spin‐Orbit Torque in Van der Waals‐Layered Materials and Heterostructures

Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory

Electron and spin transport in semiconductor and magnetoresistive devices

Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer

Spin-Orbit Torque Vector Quantification in Nanoscale Magnetic Tunnel Junctions

Field‐Free Spin‐Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect

Field-Free Spin-Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide

Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin–Orbit Torques