Abstract:Today's electronics uses electron charge as a state variable for logic and computing operation, which is often represented as voltage or current. In this representation of state variable, carriers in electronic devices behave independently even to a few and single electron cases. As the scaling continues to reduce the physical feature size and to increase the functional throughput, two most outstanding limitations and major challenges, among others, are power dissipation and variability as identified by ITRS. This paper presents the expose, in that collective phenomena, e.g., spintronics using appropriate order parameters of magnetic moment as a state variable may be considered favorably for a new room-temperature information processing paradigm. A comparison between electronics and spintronics in terms of variability, quantum and thermal fluctuations will be presented. It shows that the benefits of the scalability to smaller sizes in the case of spintronics (nanomagnetics) include a much reduced variability problem as compared with today's electronics. In addition, another advantage of using nanomagnets is the possibility of constructing nonvolatile logics, which allow for immense power savings during system standby. However, most of devices with magnetic moment usually use current to drive the devices and consequently, power dissipation is a major issue. We will discuss approaches of using electric-field control of ferromagnetism in dilute magnetic semiconductor (DMS) and metallic ferromagnetic materials. With the DMSs, carrier-mediated transition from paramagnetic to ferromagnetic phases make possible to have devices work very much like field effect transistor, plus the non-volatility afforded by ferromagnetism. Then we will describe new possibilities of the use of electric field for metallic materials and devices: Spin wave devices with multiferroics materials. We will also further describe a potential new method of electric field control of metallic ferromagnetism via field effect of the Thomas Fermi surface layer.

Electron and spin transport in semiconductor and magnetoresistive devices

From Nanoelectronics to Nano-Spintronics.

Spintronic devices: a promising alternative to CMOS devices

Spin-Dependent Transport at 2D Solids: from Nonmagnetic Layers to Ferromagnetic Van Der Waals Structures.

Computing with spins and magnets

Spintronics in Semiconductor Nanostructures

Spin-orbit torques: Materials, physics, and devices

Spintronic memristors for computing

FMR-related phenomena in spintronic devices

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

CMOS/Magnetic Hybrid Architectures

Spin transference and magnetoresistance amplification in a transistor

A Review on—Spintronics an Emerging Technology

A survey of in-spin transfer torque MRAM computing

Bipolar spintronics: From spin injection to spin-controlled logic

Electrical control of magnetism by electric field and current-induced torques

Magnetic Memory (MRAM), a New Area for 2D and 3D SoC/SiP Design

Emerging Spintronic Devices: from Ultra-High-Density Memory to Logic-In-Memory

Spintronics: Emerging Ultra-Low-Power Circuits and Systems beyond MOS Technology

Spin Transfer Torque Memories and Logic Gates

Electrically Reconfigurable 3D Spin‐Orbitronics