A Review on—Spintronics an Emerging Technology

Priti J. Rajput,Sheetal U. Bhandari,Girish Wadhwa
DOI: https://doi.org/10.1007/s12633-021-01643-x
IF: 3.4
2022-01-25
Silicon
Abstract:This review describes an emerging field of electronics devices; electron spin exploitation use for a further degree of freedom incorporation to charge state, with the significant feature like non-volatility, processing speed, reduction in power consumption, escalation in integration densities, data storage, and data transfer as compared to conventional CMOS devices. Moreover, this paper discussed challenges, limitations, and issues facing and CMOS technology and alternative solutions over CMOS. This article categorized all the details about the spin devices and strives to realize their prototype and functioning using the fundamental concept of quantum mechanics. The Magnetic RAM (MRAM) and spin-FET is a remarkable field of progress in the past few years over traditional CMOS, which urges advancement for conventional devices despite the significant challenges that lay ahead. Spin-FET's challenges are met by resolving issues in spin injection, spin transport, optical spin manipulation, and efforts in new materials fabrication. These devices contribute to the integrated circuit application of magnetic transistors towards reconfigurable logic-based devices with nonvolatility and reduction in power consumption.
materials science, multidisciplinary,chemistry, physical
What problem does this paper attempt to address?