Abstract:The emerging spin transfer torque magnetic random access memory (STT-MRAM) promises many attractive features, such as nonvolatile, high speed and low power etc, which enable it to be a promising candidate for the next-generation logic and memory circuits. However with the continuous scaling technology process, the chip yield and reliability of STT-MRAM face severe challenges due to the increasing permanent and transient faults. Due to the intrinsic fault features and the targeted application requirements of STT-MRAM, traditional fault tolerant design solutions, such as error correction code (ECC), redundancy repair (RR), and fault masking (FM) techniques, cannot be employed straightforwardly for STT-MRAM. In this paper, we propose a synergistic technique framework, named sECC, that integrates both the ECC and FM techniques to address simultaneously the permanent and transient faults. With such approach, permanent faults are masked while transient faults are corrected with the same codeword. Moreover taking into consideration the fact that most permanent faults are sparse [about 60%-70% single isolated faults (SIFs)], we propose further integrating the RR and sECC (named iRRsECC) to optimize the system performance. In this scenario, all the SIFs are masked and the transient faults are corrected with the proposed sECC, while other permanent faulty types (e.g., faulty rows or columns) are repaired with redundant rows or columns. A simulation tool is developed to evaluate the proposed techniques and the evaluation results show their good performance in terms of repair rate and hardware overhead.

The single event upset hardened design of spin transfer torque magnetic random access memory read circuits at 40 nm technology

Novel Radiation-Hardened Designs of Hybrid Spintronic/CMOS Circuit for Multi-Node Upset Tolerance

Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology

Design and Analysis of Radiation Hardened Sensing Circuits for Spin Transfer Torque Magnetic Memory and Logic

Radiation Hardening Design For Spin-Orbit Torque Magnetic Random Access Memory

Radiation-Induced Soft Error Analysis of STT-MRAM: A Device to Circuit Approach.

Radiation-Hardening Techniques for Spin Orbit Torque-MRAM Peripheral Circuitry

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

Read disturbance issue and design techniques for nanoscale STT-MRAM.

Immunity of nanoscale magnetic tunnel junctions to ionizing radiation

Fully Single Event Double Node Upset Tolerant Design for Magnetic Random Access Memory

Quantitative Evaluation of Reliability and Performance for STT-MRAM

Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

Design Considerations and Strategies for High-Reliable STT-MRAM

Addressing the Thermal Issues of STT-MRAM from Compact Modeling to Design Techniques

A 16 Kb Spin-Transfer Torque Random Access Memory with Self-Enable Switching and Precharge Sensing Schemes

Failure and reliability analysis of STT-MRAM.

Design of SEU Tolerant Read Circuit for Non-Volatile Memories with high reliability

Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM

Study on Single Event Upsets in a 28 Nm Technology Static Random Access Memory Device Based on Micro-Beam Irradiation

Yield and Reliability Improvement Techniques for Emerging Nonvolatile STT-MRAM