Abstract:The concept of memory that can only be read but cannot be changed seems strange at first. In reality, it is found that it has great application potential, such as the processor with a fixed purpose, the initial set value of the microprocessor BIOS, and these data are stored in Programmable Read-Only Memory (PROM) to quickly realize system functions. The PROM storage content is fixed, greatly simplifying his design. The radiation of space particles is the main factor causing the failure of the electronic system of spacecraft. The PROM storage array of the space electronic system is the most basic guarantee for the normal operation of the electronic system. The chip adopts domestic 130 nm standard technology of Complementary Metal Oxide Semiconductor (CMOS), Muller-C digital filter is used in the peripheral subsystem of PROM storage array, and the core cell uses Dual Interlocked Cell (DICE) and ring gate and other radiation hardening technologies to design a 32Kx8bit radiation resistant asynchronous programmable PROM. Pre-silicon of devices was verified by Technology Computer Aided Design (TCAD), and post silicon radiation verification was completed through radiation experiment. The post silicon radiation experiment showed that the total ionizing Dose (TID) capacity of the PROM chip was ≥100 Krad (Si), the critical value of single event upset (SEU) was ≥37.1 MeV·cm 2 /mg, the critical value of single event latch up was ≥98 MeV·cm 2 /mg, meeting the life requirements of the initial value storage of aerospace electronic systems. These performances ensure the reliable operation of the space electronic system after restart.

Design of SEU Tolerant Read Circuit for Non-Volatile Memories with high reliability

Fault-Tolerant Design of Memory Module for Pica-satellite On-Board Computer

A Novel SEU Tolerant Memory Cell for Space Applications.

Design of polarity hardening SRAM for mitigating single event multiple node upsets

Radiation Hardened 12T SRAM with Crossbar-Based Peripheral Circuit in 28nm CMOS Technology

A Novel Highly Reliable and Low-Power Radiation Hardened SRAM Bit-Cell Design

The single event upset hardened design of spin transfer torque magnetic random access memory read circuits at 40 nm technology

Testing of a new type SEU-tolerant SRAM

Simulation and Research on a 4T-Cell Based Duplication Redundancy SRAM for SEU Radiation Hardening

A radiation-hardened hybrid RRAM-based non-volatile latch

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Radiation-hardened latch design with triple-node-upset recoverability

Radiation Hardened Read Circuit with High Reliability for SOI Based SONOS Memory

Characterization of Single Event Effect in a Radiation Hardened Programmable Read-Only Memory in a 130 nm Bulk CMOS Technology

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Design of Reading Circuit for High-Reliability 55-Nm Split-Gate SuperFlash Technology

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

Design and Verification of Multiple SEU Mitigated Circuits on SRAM-based FPGA System

A Novel Self-Recoverable and Triple Nodes Upset Resilience DICE Latch

A Novel Soft Error Immunity SRAM Cell

Radiation-Immune Spintronic Binary Synapse and Neuron for Process-in-Memory Architecture