Abstract:The device utilized in space application demands reliable and stable static-random-access-memory (SRAM) circuits for uninterrupted and secure operation. In this paper, we have realized radiation hardened SRAM cell using dopingless transistor (DLT) and compared its performance with junctionless transistor (JLT) SRAM cell for secure and reliable operation. For realizing DL and JLT based SRAM cell, the device–circuit co-design methodology is incorporated. To reduce the impact of single event upset (SEU), the radiation hardening by design (RHBD) approach is deployed. In this technique, the resistor–capacitor (RC) circuit or RC feedback paths are connected between the input and output of cross-coupled inverter pair of SRAM cell. Using RHBD technique, the soft error (SE) sensitivity is measured and found SRAM realized with JLT and DLT are secured from the bit flipping due to SE effect. Further, the stability and performance of SRAM cells are evaluated. It is shown that hold static noise margin (HSNM) of DLT SRAM cell is improved by 7.4% in contrast to JLT SRAM cell. While, the read and write access time of DLT SRAM cell are improved by ~ 23.6% and ~ 52.4% than JLT SRAM cell. In addition, standby leakage power of DLT SRAM cell is reduced by ~ 76% than JLT SRAM. Thus, DLT SRAM cell performs faster read and write operation and consume less power which is useful for designing high-speed energy-efficient system.

A Novel SEU Tolerant Memory Cell for Space Applications.

Fault-Tolerant Design of Memory Module for Pica-satellite On-Board Computer

A Novel Highly Reliable and Low-Power Radiation Hardened SRAM Bit-Cell Design

Design of SEU Tolerant Read Circuit for Non-Volatile Memories with high reliability

Simulation and Research on a 4T-Cell Based Duplication Redundancy SRAM for SEU Radiation Hardening

Design of polarity hardening SRAM for mitigating single event multiple node upsets

Radiation Hardened 12T SRAM with Crossbar-Based Peripheral Circuit in 28nm CMOS Technology

A robust radiation resistant SRAM cell for space and military applications

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A highly stable and low‐cost 12T radiation hardened SRAM cell design for aerospace application

Testing of a new type SEU-tolerant SRAM

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Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

An SEU Hardened 65Nm/4t-Sram Cell for High Reliable Space Applications

A Novel Soft Error Immunity SRAM Cell

SEDONUT: A Single Event Double Node Upset Tolerant SRAM for Terrestrial Applications

The single event upset hardened design of spin transfer torque magnetic random access memory read circuits at 40 nm technology

Design of Radiation Hardened SRAM Cell using Dopingless Transistor for Space Applications

Radiation-Hardened 14T SRAM Bitcell with Speed and Power Optimized for Space Application

Design of Highly Reliable 14T and 16T SRAM Cells Combined with Layout Harden Technique

A Radiation-Hardened Programmable Read Only Memory for Space Applications.