Abstract:The device utilized in space application demands reliable and stable static-random-access-memory (SRAM) circuits for uninterrupted and secure operation. In this paper, we have realized radiation hardened SRAM cell using dopingless transistor (DLT) and compared its performance with junctionless transistor (JLT) SRAM cell for secure and reliable operation. For realizing DL and JLT based SRAM cell, the device–circuit co-design methodology is incorporated. To reduce the impact of single event upset (SEU), the radiation hardening by design (RHBD) approach is deployed. In this technique, the resistor–capacitor (RC) circuit or RC feedback paths are connected between the input and output of cross-coupled inverter pair of SRAM cell. Using RHBD technique, the soft error (SE) sensitivity is measured and found SRAM realized with JLT and DLT are secured from the bit flipping due to SE effect. Further, the stability and performance of SRAM cells are evaluated. It is shown that hold static noise margin (HSNM) of DLT SRAM cell is improved by 7.4% in contrast to JLT SRAM cell. While, the read and write access time of DLT SRAM cell are improved by ~ 23.6% and ~ 52.4% than JLT SRAM cell. In addition, standby leakage power of DLT SRAM cell is reduced by ~ 76% than JLT SRAM. Thus, DLT SRAM cell performs faster read and write operation and consume less power which is useful for designing high-speed energy-efficient system.

A Novel Highly Reliable and Low-Power Radiation Hardened SRAM Bit-Cell Design

Testing of a new type SEU-tolerant SRAM

Simulation and Research on a 4T-Cell Based Duplication Redundancy SRAM for SEU Radiation Hardening

Radiation Hardened 12T SRAM with Crossbar-Based Peripheral Circuit in 28nm CMOS Technology

Design of polarity hardening SRAM for mitigating single event multiple node upsets

Radiation-Hardened 14T SRAM Bitcell with Speed and Power Optimized for Space Application

A Novel SEU Tolerant Memory Cell for Space Applications.

Single-Event Multiple Effect Tolerant RHBD14T SRAM Cell Design for Space Applications

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Design of SEU Tolerant Read Circuit for Non-Volatile Memories with high reliability

Design of Highly Reliable 14T and 16T SRAM Cells Combined with Layout Harden Technique

SEDONUT: A Single Event Double Node Upset Tolerant SRAM for Terrestrial Applications

A Novel High-Density Single-Event Upset Hardened Configurable SRAM Applied to FPGA

A Novel Soft Error Immunity SRAM Cell

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

An SEU Hardened 65Nm/4t-Sram Cell for High Reliable Space Applications

A highly stable and low‐cost 12T radiation hardened SRAM cell design for aerospace application

Design of Radiation Hardened SRAM Cell using Dopingless Transistor for Space Applications

A Reliable and high performance Radiation Hardened Schmitt Trigger 12T SRAM cell for space applications

Single-Event Upsets in SRAMs with Scaling Technology Nodes Induced by Terrestrial, Nuclear Reactor, and Monoenergetic Neutrons

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results