Abstract:A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor technology. The single event upset(SEU) cross sections of this memory are obtained via heavy ion irradiation with a linear energy transfer(LET) value ranging from 1.7 to 83.4 MeV/(mg/cm 2 ). Experimental results show that the upset threshold(LET th ) of a 4 KB block is approximately 6 MeV/(mg/cm 2 ), which is much better than that of a standard unhardened SRAM with an identical technology node. A1 KB block has a higher LETthof 25 MeV/(mg/cm 2 ) owing to the use of the error detection and correction(EDAC)code. For a Ta ion irradiation test with the highest LET value(83.4 MeV/(mg/cm 2 )), the benefit of the EDAC code is reduced significantly because the multi-bit upset proportion in the SEU is increased remarkably. Compared with normal incident ions, the memory exhibits a higher SEU sensitivity in the tilt angle irradiation test. Moreover,the SEU cross section indicates a significant dependence on the data pattern. When comprehensively considering HSPICE simulation results and the sensitive area distributions of the DICE cell, it is shown that the data pattern dependence is primarily associated with the arrangement of sensitive transistor pairs in the layout. Finally, some suggestions are provided to further improve the radiation resistance of the memory. By implementing a particular design at the layout level, the SEU tolerance of the memory is improved significantly at a low area cost. Therefore, the designed 65 nm SRAM is suitable for electronic systems operating in serious radiation environments.

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

SEU Tolerance Improvement in 22 Nm UTBB FDSOI SRAM Based on a Simple 8T Hardened Cell

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 Nm FDSOI SRAMs

Testing of a new type SEU-tolerant SRAM

Mitigation of Single-Event Upset Sensitivity for 6T SRAM in a 0.18 Μm DSOI Technology Considering High LET Heavy Ions Irradiation

Verification of SEU Resistance in 65 Nm High-Performance SRAM with Dual DICE Interleaving and EDAC Mitigation Strategies

Experimental Investigation of SEUs Induced by Heavy Ions in 28-Nm FDSOI SRAMs

Simulation and Research on a 4T-Cell Based Duplication Redundancy SRAM for SEU Radiation Hardening

Area-efficient Radiation-Hardened 6 T SOI SRAM Cell Design Using TDBC Transistors

SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs

A Novel Circuit and Layout Design of SEU Tolerant SRAM in a 65nm CMOS Process

Design and Verification of Multiple SEU Mitigated Circuits on SRAM-based FPGA System

Radiation Hardened 12T SRAM with Crossbar-Based Peripheral Circuit in 28nm CMOS Technology

A Comparison of Heavy Ion Induced Single Event Upset Susceptibility in Unhardened 6t/sram and Hardened Ade/Sram

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

A Novel Seu Hardened Sram Bit-Cell Design

Research and Design of SEU-Hardened SRAM Chip

Heavy Ion Induced SEU Sensitivity Evaluation of 3D Integrated SRAMs

Characterization of Single-Event Upsets Induced by High-LET Heavy Ions in 16-Nm Bulk FinFET SRAMs

Study of SEU radiation experimental system technology of SRAM-based FPGA