Abstract:As the feature size of integrated circuit decreases, the critical charge of single-event effect decreases as well, making nano-scale devices more susceptible to the high-energy charged particles during their application in space. Here, we study the electron-induced single-event effect in 28 nm static random-access memory (SRAM)-based field programmable gate array (FPGA) utilizing high-energy electrons with energy of 1 MeV~5 MeV. The experimental results demonstrate that the 3 MeV electrons can cause single-event functional interrupts (SEFIs) in FPGA, while the electrons with other energies cannot. To further explore the mechanism of electron-induced SEFIs in this nanoscale FPGA, we combined Monte Carlo, Technology Computer-Aided Design (TCAD), and Simulation Program with Integrated Circuit Emphasis (SPICE) simulations. It is revealed that the SEFI was mainly caused by the direct ionization effect of high-energy electrons, and the SEFI was related to the interactions between multiple sensitive nodes.

What problem does this paper attempt to address?

### Problems Addressed by the Paper This paper aims to investigate the single event effects (SEE) of 28-nanometer static random-access memory (SRAM)-based field-programmable gate arrays (FPGA) under high-energy electron irradiation. Specifically, the paper focuses on the impact of high-energy electrons in the range of 1 MeV to 5 MeV on 28-nanometer SRAM-based FPGAs, particularly whether these electrons can cause single event functional interrupts (SEFI). ### Background and Motivation As the feature size of integrated circuits decreases, the critical charge for single event effects also reduces, making nanoscale devices more susceptible to high-energy charged particles in space applications. In the space environment, there are various high-energy particles such as protons, electrons, and heavy ions. These charged particles generate charge as they pass through the PN junctions of transistors, leading to logic cell flips, functional interrupts, or burnout. Especially when the device feature size reaches the nanoscale, the operating voltage gradually decreases, and the critical charge also reduces, making circuits more sensitive to single event effects. ### Current Research Status Previous research has mainly focused on single event effects in SRAM-based FPGAs caused by protons and heavy ions. However, with the development of deep space exploration, spacecraft near Jupiter may encounter higher energy electrons than those near Earth. Additionally, cosmic rays can produce secondary particles called δ-rays, which include high-energy electrons. These environments may lead to device degradation or failure. Although electron-induced single event upsets (SEU) have been observed in high-tech SRAM and FPGAs, most studies have focused on electron-induced SEU in memory cells, and it is not yet clear whether high-energy electrons can cause SEU in logic cells, leading to SEFI in devices. ### Research Objectives To evaluate the sensitivity of FPGAs to single event effects from electrons of different energies, this study investigated the single event effects of 28-nanometer SRAM-based FPGAs using electrons with energies ranging from 1 MeV to 5 MeV. The study found that 3 MeV electrons could cause SEFI in FPGAs, while electrons of other energies could not. By combining Monte Carlo simulations, technology computer-aided design (TCAD), and circuit simulation programs (SPICE), it was revealed that SEFI is mainly caused by the direct ionization effect of high-energy electrons and is related to the interaction between multiple sensitive nodes. ### Experimental Methods The test device used in the experiment is a 28-nanometer Virtex-7 SRAM-based FPGA (XC7VX690T) produced by Xilinx, with 693,120 logic cells. The experiment was conducted at the electron linear accelerator of the National Space Science Center of the Chinese Academy of Sciences, selecting energies of 1 MeV, 2 MeV, 3 MeV, 4 MeV, and 5 MeV, with an irradiation dose of 1 × 10^12 cm^-2. Before the experiment, the functional state of the FPGA was checked to ensure no initial errors. During the experiment, a computer periodically sent and read data while monitoring the core current. If the core current increased to more than 1.5 times the normal value and could only be restored by rebooting, it was recorded as a single event latch-up (SEL). ### Results and Discussion The experimental results showed that when the electron energy was 3 MeV, SEFI occurred in the POR register, and a large number of SEUs were observed in the CLB and BRAM. No SEL, SEFI, or SEU was observed at other electron energies. These results indicate that nanoscale FPGAs have significant sensitivity to single event effects under electron irradiation at certain specific energies. ### Simulation and Discussion To further explore the mechanism of electron-induced SEE, the Monte Carlo simulation tool Geant4 was used to study the physical interaction between high-energy electrons and the POR register of the FPGA. Based on the Geant4 simulation results, device-level and circuit-level models were established using TCAD and SPICE simulations to analyze the changes in device characteristics during electron irradiation and their potential mechanisms. The results showed that high-energy electrons mainly cause energy deposition through direct ionization effects, consistent with previous findings that electrons below 10 MeV mainly deposit energy through direct ionization. ### Conclusion This study reveals the mechanism by which 3 MeV electrons cause SEFI in 28-nanometer SRAM-based FPGAs, providing important references for understanding the reliability of nanoscale devices in space environments.

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