Abstract:An SRAM (static random access memory)-based reprogrammable FPGA (field programmable gate array) is investigated for space applications. A new commercial prototype, named the RS family, was used as an example for the investigation. The device is fabricated in a 0.25 /spl mu/m CMOS technology. Its architecture is reviewed to provide a better understanding of the impact of single event upset (SEU) on the device during operation. The SEU effect of different memories available on the device is evaluated. Heavy ion test data and SPICE simulations are used integrally to extract the threshold LET (linear energy transfer). Together with the saturation cross-section measurement from the layout, a rate prediction is done on each memory type. The SEU in the configuration SRAM is identified as the dominant failure mode and is discussed in detail. The single event transient error in combinational logic is also investigated and simulated by SPICE. SEU mitigation by hardening the memories and employing EDAC (error detection and correction) at the device level are presented. For the configuration SRAM (CSRAM) cell, the trade-off between resistor dc-coupling and redundancy hardening techniques are investigated with interesting results. Preliminary heavy ion test data show no sign of SEL (single event latch-up). With regard to ionizing radiation effects, the increase in static leakage current (static I/sub CC/) measured indicates a device tolerance of approximately 50 krad(Si).

Comparison of Single Event Effect and Space Electrostatic Discharge Effect on FPGA Signal Transmission

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

SRAM based re-programmable FPGA for space applications

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

300 Thousand Gates Single Event Effect Hardened SRAM-based FPGA for Space Application (Abstract Only).

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

Design and Verification of Multiple SEU Mitigated Circuits on SRAM-based FPGA System

SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs

CRC Circuit Design for SRAM-Based FPGA Configuration Bit Correction

SEU ground and flight data in static random access memories

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Fault modeling and characteristics of SRAM-based FPGAs (abstract only).

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

Experimental Studies of Single-Event Effects Induced by Heavy Ions

SRAM-Based FPGA SEU Fault Propagation Model

A Novel High-Density Single-Event Upset Hardened Configurable SRAM Applied to FPGA

Testing of a new type SEU-tolerant SRAM

The Research of FPGA Reliability Based on Redundancy Methods

Measurement and evaluation of the Single Event Effects of high-performance SerDes circuits

New Insights into the Impact of SEUs in FPGA CRAMs

Characterization of LDO Induced Increment of SEE Sensitivity for 22-Nm FDSOI SRAM