Experimental Studies of Single-Event Effects Induced by Heavy Ions

J Liu,MD Hou,BQ Li,CL Liu,ZG Wang,S Cheng,YM Sun,YF Jin,YL Lin,JR Cai,SJ Wang,ZH Ye,GW Zhu,H Du,QY Ren,W Wu,XM Mao,YQ Sun,R Guo
DOI: https://doi.org/10.1016/s0168-583x(99)01103-9
2000-01-01
Abstract:This paper presents the results of ground-based heavy ion test of single-event effect (SEE) vulnerability on microcircuits used in space. We observed the dependence of upset cross-sections on the incident angle of ions in Intel 8086 CPU. SEU cross-sections of various SRAMs did not depend on the stored pattern, but 0→1 and 1→0 transitions were completely different for different manufacturer products. Some SEE protection methods were verified in conditions of ground simulation experiments.
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