Abstract:Research on single event effects (SEEs) is significant to the design and manufacture of modern electronic devices. By applying two photon absorption (TPA) ultra-fast pulsed lasers, extra electron-hole pairs (EHPs) are generated in a desired location on a chip, simulating the process that could occur in the circuit by energetic particles. In this study, a SEE sensitivity mapping system is described which uses this method to generate real-time sensitivity maps for various electronic devices. The system hardware includes an attenuator to control the energy, a Pockels cell as a fast-optical switcher and a mirror–mirror module to project the laser beam into a certain location. The system software developed for this application controls the laser system, automatically generates sensitivity maps, communicates with the testing devices and logs the SEE results. The two main features of this laser mapping system are: high scanning velocity for large area scanning (about 1 × 1 mm) and high spatial resolution for small area scanning (about 1 × 1 μm). To verify this mapping system, sensitivity maps were generated for static random access memory (SRAM) built with 65 nm technology and for commercial operational amplifiers (op-amps). The achieved sensitivity maps were compared with circuitry analysis and laser testing results, confirming this mapping system to be effective.

Localized Stress Effects on the Single Event Effects Sensitivity of Microelectronics

Investigation of Single-Event Effects for Space Applications: Instrumentation for In-Depth System Monitoring

The single-event effect evaluation technology for nano integrated circuits

Experimental Studies of Single-Event Effects Induced by Heavy Ions

Prototype of single-event effect localization system with CMOS pixel sensor

Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology

Stress Sensitivity Origin of Extended Defects Production Under Coupled Irradiation and Mechanical Loading

Mutual interference induced by single event effects in CMOS circuits

Study of Local Stress Using Stress-Absorbing Si Diaphragm

A Novel Approach to Study Patterned Thin Film Local Stress for Microelectronics Application

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs

Non-destructive Depth-Resolved Characterization of Residual Strain Fields in High Electron Mobility Transistors using Differential Aperture X-ray Microscopy

Developing a Universal Mirror–mirror Laser Mapping System for Single Event Effect Research

Design and Verification of Universal Evaluation System for Single Event Effect Sensitivity Measurement in Very-Large-scale Integrated Circuits

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

Characterization of LDO Induced Increment of SEE Sensitivity for 22-Nm FDSOI SRAM

Identification of localized radiation damage in power MOSFETs using EBIC imaging

Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier

Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA