Abstract:A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicon tracker for the Circular Electron-Positron Collider (CEPC) project. The sensor, consisted of nine sectors varying in pixel sizes, diode sizes and geometries, is fabricated with a 180 nm CMOS Image Sensor (CIS) process to study the particle detection performance of enlarged pixels. In this work, the radiation-induced effects on the charge collection of the sensor under the fluence of 1 $\times$ 10^13 1 MeV neq/cm^2 are studied by the measurements with the radioactive source of Fe-55 and the Technology Computer Aided Design (TCAD) simulations, since the radiation hardness of 6.8 $\times$ 10^12 1 MeV neq/cm^2 per year for Non-Ionizing Energy Loss (NIEL) effects is required. In measurements, the sensor gain has been calibrated using the k-$\alpha$ peak of Fe-55 before and after irradiation. The pixel-wise equivalent noise charge (ENC), charge collection efficiency (CCE) and signal-to-noise ratio (SNR) were evaluated. The radiation-induced effects on cluster properties are studied through a self-developed reconstruction algorithm. In TCAD simulations, charge collections in 5 $\times$ 5 pixel matrixes for two typical impinging cases of incident particles were simulated with and without irradiation. Both measurements and simulations indicate that enlarged pixels with area of 21 $\mu$m $\times$ 84 $\mu$m, though suffering greater loss on sensor performance than small pixels do, still have satisfactory noise and charge collection performance after irradiation for particle tracking in the upcoming collider detectors.

Prototype of single-event effect localization system with CMOS pixel sensor

Prototype Design of Readout Electronics for In-Beam TOF-PET of Heavy-Ion Cancer Therapy Device

A Full Functional Monolithic Active Pixel Sensor Prototype for the CEPC Vertex Detector

Beam Test of a Monolithic Active Pixel Sensor for the CEPC Vertex Detector

Developing a Universal Mirror–mirror Laser Mapping System for Single Event Effect Research

Localized Stress Effects on the Single Event Effects Sensitivity of Microelectronics

Prototype design of a Monolithic Active Pixel Sensor for the Electron-ion collider in China

Research on single event upset effect of CMOS image sensor for space application

Characterization of the first prototype CMOS pixel sensor developed for the CEPC vertex detector

The single-event effect evaluation technology for nano integrated circuits

Radiation hardness study on a CMOS pixel sensor for charged particle tracking

Data Acquisition System for CEPC Vertex Detector Prototype

Development of a highly pixelated direct charge sensor, Topmetal-I, for ionizing radiation imaging

A beam monitor using silicon pixel sensors for hadron therapy

Experimental Studies of Single-Event Effects Induced by Heavy Ions

Measurement of Single Event Effect cross section induced by monoenergetic protons on a 130 nm ASIC

Beam test of a 180 nm CMOS Pixel Sensor for the CEPC vertex detector

Characterization of passive CMOS sensors with RD53A pixel modules

Investigation of proton single-event transient in CMOS image sensor

Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology

Radiation effects on a radiation-tolerant CMOS active pixel sensor