Investigation of proton single-event transient in CMOS image sensor

Zhigang Peng,Yanjun Fu,Yuan Wei,Yinghong Zuo,Shengli Niu,Jinhui Zhu,Yaxin Guo,Fang Liu,Pei Li,Chaohui He,Yonghong Li

DOI: https://doi.org/10.1063/5.0184659

IF: 1.697

2024-01-01

AIP Advances

Abstract:With the increasingly widespread application of CMOS image sensors (CIS) in radiation environments, such as aerospace, their radiation effects have gained attention. This paper investigates single-event transient (SET) caused by the proton direct ionization on CIS, combining both experimental and simulation methods. The proton beam energy used in the experiment is 12 MeV, with a flux up to 3.5 × 108 p/(cm2 s). Due to the periodicity of the proton beam, the CIS output displays a phenomenon of alternating brightness and darkness. When the proton beam flux is low, numerous SET bright spots with different outputs are observed. To comprehensively analyze these experimental phenomena, a typical three-dimensional 4T pinned photodiode model is constructed in TCAD, and relevant SET simulation is carried out. The results indicate that incident position, incident time, and the number of incident protons significantly affect the output of SET-generated bright spots, which are key factors contributing to the different bright spots observed in the experiment.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

What problem does this paper attempt to address?

The paper aims to study the Single Event Transient (SET) effects of Complementary Metal-Oxide-Semiconductor (CMOS) image sensors in radiation environments. Specifically, the paper focuses on the SET effects caused by proton direct ionization on CMOS image sensors. The research combines experimental methods and simulation techniques. Through a 12 MeV proton beam irradiation experiment, the phenomenon of alternating brightness in the output image was observed, and multiple different SET bright spots were observed at low proton beam flux. The main objectives of the paper are: 1. **Investigate Proton-Induced SET**: Study the impact of proton direct ionization on CMOS image sensors, particularly the Single Event Transient effects caused by protons in radiation environments such as space. 2. **Analyze Experimental Phenomena**: Observe the changes in the output image with varying proton beam flux through experiments, and explore the effects of different proton incidence positions, incidence times, and incidence quantities on the output of SET bright spots. 3. **Simulation Verification**: Use TCAD simulation tools to construct a 3D 4T PIN diode model for related SET simulations to verify and explain the phenomena observed in the experiments.

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