Investigation of Single-Event Effects for Space Applications: Instrumentation for In-Depth System Monitoring

André M. P. Mattos,Douglas A. Santos,Lucas M. Luza,Viyas Gupta,Luigi Dilillo
DOI: https://doi.org/10.3390/electronics13101822
IF: 2.9
2024-05-08
Electronics
Abstract:Ionizing radiation induces the degradation of electronic systems. For memory devices, this phenomenon is often observed as the corruption of the stored data and, in some cases, the occurrence of sudden increases in current consumption during the operation. In this work, we propose enhanced experimental instrumentation to perform in-depth Single-Event Effects (SEE) monitoring and analysis of electronic systems. In particular, we focus on the Single-Event Latch-up (SEL) phenomena in memory devices, in which current monitoring and control are required for testing. To expose the features and function of the proposed instrumentation, we present results for a case study of an SRAM memory that has been used on-board PROBA-V ESA satellite. For this study, we performed experimental campaigns in two different irradiation facilities with protons and heavy ions, demonstrating the instrumentation capabilities, such as synchronization, high sampling rate, fast response time, and flexibility. Using this instrumentation, we could report the cross section for the observed SEEs and further investigate their correlation with the observed current behavior. Notably, it allowed us to identify that 95% of Single-Event Functional Interrupts (SEFIs) were triggered during SEL events.
engineering, electrical & electronic,computer science, information systems,physics, applied
What problem does this paper attempt to address?
The paper aims to address the issue of monitoring and analyzing Single-Event Effects (SEEs) in electronic systems caused by ionizing radiation in space applications. Specifically, the research focuses on the phenomenon of Single-Event Latch-up (SEL) in memory devices and proposes an improved experimental instrument to perform in-depth SEEs monitoring and analysis. With this instrument, researchers can monitor the behavioral changes of memory under radiation, particularly changes in current consumption, and identify the correlation between these phenomena and functional interruptions. The paper also presents experimental results conducted at two different radiation facilities (proton and heavy ion), demonstrating the capabilities of the proposed instrument, including synchronicity, high sampling rate, fast response time, and flexibility. In short, the main objective of the paper is to develop a novel experimental instrument for detailed monitoring of SEEs in electronic systems such as memory in space environments, to enhance system reliability and robustness. Additionally, by using this instrument, researchers can better understand the impact of SEEs on system performance and provide new insights for future radiation testing.