Abstract:The concept of memory that can only be read but cannot be changed seems strange at first. In reality, it is found that it has great application potential, such as the processor with a fixed purpose, the initial set value of the microprocessor BIOS, and these data are stored in Programmable Read-Only Memory (PROM) to quickly realize system functions. The PROM storage content is fixed, greatly simplifying his design. The radiation of space particles is the main factor causing the failure of the electronic system of spacecraft. The PROM storage array of the space electronic system is the most basic guarantee for the normal operation of the electronic system. The chip adopts domestic 130 nm standard technology of Complementary Metal Oxide Semiconductor (CMOS), Muller-C digital filter is used in the peripheral subsystem of PROM storage array, and the core cell uses Dual Interlocked Cell (DICE) and ring gate and other radiation hardening technologies to design a 32Kx8bit radiation resistant asynchronous programmable PROM. Pre-silicon of devices was verified by Technology Computer Aided Design (TCAD), and post silicon radiation verification was completed through radiation experiment. The post silicon radiation experiment showed that the total ionizing Dose (TID) capacity of the PROM chip was ≥100 Krad (Si), the critical value of single event upset (SEU) was ≥37.1 MeV·cm 2 /mg, the critical value of single event latch up was ≥98 MeV·cm 2 /mg, meeting the life requirements of the initial value storage of aerospace electronic systems. These performances ensure the reliable operation of the space electronic system after restart.

Characterization of LDO Induced Increment of SEE Sensitivity for 22-Nm FDSOI SRAM

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Total Dose Radiation Experiments In Cmos/Soi 4kb Sram

Testing of a new type SEU-tolerant SRAM

Radiation Hardened 12T SRAM with Crossbar-Based Peripheral Circuit in 28nm CMOS Technology

Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 Nm FDSOI SRAMs

Characterization of Single Event Effect in a Radiation Hardened Programmable Read-Only Memory in a 130 nm Bulk CMOS Technology

Characterization of Heavy Ion Induced SET Features in 22-Nm FD-SOI Testing Circuits

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Design of Radiation Hardened SRAM Cell using Dopingless Transistor for Space Applications

Research on single event effects and hardening design of LDMOS transistors

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

Comparison of Single Event Effect and Space Electrostatic Discharge Effect on FPGA Signal Transmission

Radiation Hardened Read Circuit with High Reliability for SOI Based SONOS Memory

Simulation and Research on a 4T-Cell Based Duplication Redundancy SRAM for SEU Radiation Hardening

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

Single-Event Multiple Effect Tolerant RHBD14T SRAM Cell Design for Space Applications