Abstract:The total ionizing mymargin dose mymargin (TID) effect is systematically investigated in the double silicon-on-insulator (DSOI) static random access memory (SRAM) circuits, taking into consideration: silicon film thicknesses, floating/unfloating body, and back-gate bias. It is experimentally demonstrated that the SRAM circuits with thinner silicon layer (45 nm) and floating-body transistors exhibit better radiation tolerance, with a corresponding decrease in read current by 3.8% and an increase in access time by 34.7%. This can be attributed to enhanced back-gate tuning ability, which increased from 2.17% to 8.62% for nMOS and from 8.6% to 34.7% for pMOS. A back-gate bias of -3 V is sufficient to compensate for the degradation with total dose accumulated up to 1 Mrad(Si). Technology computer-aided design (TCAD) simulations indicate that the electric field gradually saturates near the first buried oxide (BOX) for a thicker silicon layer, weakening the modulation ability of back-gate bias. Compared with floating devices, the tuning range is reduced for devices with body-tie (unfloating body), and higher back-gate voltages can significantly strengthen the electric field in the channel, around three times. This results in a substantial increase in the channel current, implying that the back-gate bias cannot be increased unrestrictedly.

Total Dose Radiation Experiments In Cmos/Soi 4kb Sram

The Total Ionizing Dose Response of a DSOI 4kb SRAM

Total Ionizing Radiation Effects of 2-T SONOS for 130 Nm/4 Mb NOR Flash Memory Technology

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

Total Dose Characteristics of Single Poly EEPROM and SONOS EEPROM on SOI

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Study on the Dose Rate Upset Effect of Partially Depleted Silicon-on-insulator Static Random Access Memory

Total Dose Radiation-Hard 0.8μm SOI CMOS Transistors and ASIC

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

Radiation-Hardened 14T SRAM Bitcell with Speed and Power Optimized for Space Application

Simulation and Research on a 4T-Cell Based Duplication Redundancy SRAM for SEU Radiation Hardening

Impact of Back-gate Bias and Body-tie on the DSOI SRAMs under Total Ionizing Dose Irradiation

Tid Radiation Response of 3-D Vertical Gaa Sonos Memory Cells

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

A Novel Single Event Upset Hardened Cmos Sram Cell

Testing of a new type SEU-tolerant SRAM

Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology

Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 Nm FDSOI SRAMs

Radiation Hardened 12T SRAM with Crossbar-Based Peripheral Circuit in 28nm CMOS Technology

Characterization of LDO Induced Increment of SEE Sensitivity for 22-Nm FDSOI SRAM

A Reliable and high performance Radiation Hardened Schmitt Trigger 12T SRAM cell for space applications