Abstract:Static random-access memory (SRAM) circuits exposed to pulsed X- or γ-rays will suffer transient radiation upsets, which poses a significant challenge to their reliability. The transient radiation upsets are caused by global photocurrents, which are governed by the interconnect resistance of the power supply lines and the local photocurrents generated in each memory cell. Thus, accurate modeling of local photocurrents in each memory cell is essential for predicting the global photocurrents and transient radiation upset thresholds of SRAM circuits. In this study, the local photocurrents generated in a 0.18-μm complementary metal-oxide-semiconductor (CMOS) SRAM cell are extracted using a physics-based model of the actual device structure, rather than an analytical or experimental model. The memory cell containing six transistors and parasitic structures is accurately modeled in three-dimensions. Its responses to pulsed γ-rays are simulated with an in-house parallel semiconductor device simulation program, which enables the extraction of accurate local photocurrents. These local photocurrents, together with the interconnect resistance of the power supply lines in SRAM circuits, are modeled and simulated with an in-house parallel SPICE circuit solver. Using this approach, the global photocurrents in the 0.18-μm CMOS SRAM circuit irradiated with γ-rays are obtained and the known rail-span-collapse effect is observed. Finally, the transient radiation upset threshold of the SRAM circuit is predicted numerically and verified experimentally.

TCAD SIMULATION OF SELBOX AND DSOI CMOS SRAM FAILURE

Impact of Back-gate Bias and Body-tie on the DSOI SRAMs under Total Ionizing Dose Irradiation

Total Dose Radiation Experiments In Cmos/Soi 4kb Sram

Analysis Of Single-Event Effects In Selected Box-Based Fdsoi Transistor And Inverter

Single Event Latch-Up Hardening Using TCAD Simulations in 130 nm and 65 nm Embedded SRAM in Flash-Based FPGAs

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

A Novel Soft Error Immunity SRAM Cell

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

Simulation of Transient Radiation Upset in a 0.18-Μm CMOS SRAM by Accurately Modeling a 6T Memory Cell

The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.

Characterization of LDO Induced Increment of SEE Sensitivity for 22-Nm FDSOI SRAM

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 Nm FDSOI SRAMs

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

Simulation and Research on a 4T-Cell Based Duplication Redundancy SRAM for SEU Radiation Hardening

Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells