Abstract:Due to the limitations of the currently widely used von Neumann architecture-based computing system, research on various devices and circuit systems suitable for logic-in-memory computing applications has been conducted. In this work, the silicon-based floating gate memory cell transistor structure, which has been attracting attention as a memory to replace the dynamic random access memory or NAND Flash technology, was newly recalled, and its applicability to logic-in-memory application was confirmed. This floating gate field effect transistor (FGFET) has the advantage that the compatibility of the existing silicon-based complementary metal–oxide–semiconductor (CMOS) process is far superior to that of logic-in-memory application devices to which materials with new memory characteristics are applied. At the 32 nm technology node, which is the front node to which the planar MOSFET structure is applied, an analysis environment that can simultaneously analyze the device and circuit of the FGFET was established. For a seamless connection between FGFET-based devices and circuit analysis, the compact model of the FGFET was developed, which is applied to logic-in-memory ternary content addressable memory (TCAM) circuit design. It was verified that the two types of logic-in-memory TCAM circuits to which FGFETs are applied are superior to a conventional CMOS FET-based TCAM circuit in the number of devices used (=circuit area) and power/energy efficiency.

A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation

A Semi-Floating Gate Memory with Tensile Stress for Enhanced Performance

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Innovative Capacitorless SOI DRAMs

Special Memory Mechanisms in SOI Devices

A Novel 1T-DRAM Fabricated with 22 nm FD-SOI Technology

A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application

A Novel Capacitorless 1T DRAM with Embedded Oxide Layer

A Novel CMOS FEOL-Embedded Asymmetrical FET for Capacitor-less and Long-Retention DRAM Based on 300mm Logic Foundry Platform

Non-volatile logic-in-memory ternary content addressable memory circuit with floating gate field effect transistor

Investigation of Temperature Dependence, Device Scalability, and Modeling of Semifloating-Gate Transistor Memory Cell

Design of a Novel One Transistor-Dram Based on Bulk Silicon Substrate

A Semi‐Floating Memory with 535% Enhancement of Refresh Time by Local Field Modulation

High Density Capacitorless Dynamic Random Access Memory Cell with Quasi Silicon-on-Insulator Structure Based on Bulk Substrate

A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications

Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors with Record Data Retention and Reduced Write Latency

Multibit Non-Volatile Memory Based on WS2 Transistor with Engineered Gate Stack

Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances

A SOI Based Dopant-Free MOSFET for Logic and Memory Application

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture