Abstract:Due to the limitations of the currently widely used von Neumann architecture-based computing system, research on various devices and circuit systems suitable for logic-in-memory computing applications has been conducted. In this work, the silicon-based floating gate memory cell transistor structure, which has been attracting attention as a memory to replace the dynamic random access memory or NAND Flash technology, was newly recalled, and its applicability to logic-in-memory application was confirmed. This floating gate field effect transistor (FGFET) has the advantage that the compatibility of the existing silicon-based complementary metal–oxide–semiconductor (CMOS) process is far superior to that of logic-in-memory application devices to which materials with new memory characteristics are applied. At the 32 nm technology node, which is the front node to which the planar MOSFET structure is applied, an analysis environment that can simultaneously analyze the device and circuit of the FGFET was established. For a seamless connection between FGFET-based devices and circuit analysis, the compact model of the FGFET was developed, which is applied to logic-in-memory ternary content addressable memory (TCAM) circuit design. It was verified that the two types of logic-in-memory TCAM circuits to which FGFETs are applied are superior to a conventional CMOS FET-based TCAM circuit in the number of devices used (=circuit area) and power/energy efficiency.

Special Memory Mechanisms in SOI Devices

Innovative Capacitorless SOI DRAMs

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

A Novel 1T-DRAM Fabricated with 22 nm FD-SOI Technology

High Density Capacitorless Dynamic Random Access Memory Cell with Quasi Silicon-on-Insulator Structure Based on Bulk Substrate

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

A Monolithic-3D SRAM Design with Enhanced Robustness and In-Memory Computation Support

A Novel Capacitorless 1T DRAM with Embedded Oxide Layer

Progress in Z(2)-Fet 1T-Dram: Retention Time, Writing Modes, Selective Array Operation, and Dual Bit Storage

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances

High Performance Si-MoS2 Heterogeneous Embedded DRAM

Non-volatile logic-in-memory ternary content addressable memory circuit with floating gate field effect transistor

A Novel CMOS FEOL-Embedded Asymmetrical FET for Capacitor-less and Long-Retention DRAM Based on 300mm Logic Foundry Platform

Multifunctional Computing-in-memory SRAM Cells Based on Two-Surface-channel MoS2 Transistors

High Performance 2T0C DRAM Cells Based on Atomic-Layer-deposited InAlZnO FETs

Simulation of capacitorless DRAM based on polycrystalline silicon with a vertical underlap structure and a separated channel layer