Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Simulation of capacitorless DRAM based on polycrystalline silicon with a vertical underlap structure and a separated channel layer

Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances

3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence

Capacitorless 1T-DRAM on crystallized poly-Si TFT

Bulk fin-type field-effect transistor-based capacitorless dynamic random-access memory with strong resistance to geometrical variations

A high-performance capacitorless 1T-DRAM based on Z-shaped electron-hole bilayer TFET and SiGe memory window

A Novel Capacitorless 1T DRAM with Embedded Oxide Layer

A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration

A Semi-Floating Gate Memory with Tensile Stress for Enhanced Performance

Improvement in Retention Time of Capacitorless DRAM with Access Transistor

Schottky barrier memory based on heterojunction bandgap engineering for high-density and low-power retention

Nanoelectromechanical DRAM for Ultra-Large-scale Integration (ULSI)

A Novel 1T-DRAM Fabricated with 22 nm FD-SOI Technology

Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors

CMOS Logic and Capacitorless DRAM by Stacked Oxide Semiconductor and Poly-Si Transistors for Monolithic 3-D Integration

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

Design of a Novel One Transistor-Dram Based on Bulk Silicon Substrate

High Performance Si-MoS2 Heterogeneous Embedded DRAM