Use of automated image analysis in evaluation of Mesothelioma Tissue Microarray (TMA) from National Mesothelioma Virtual Bank.

Waqas Amin,M. Srinivasan,S. Song,A. Parwani,M. Becich

DOI: https://doi.org/10.1016/j.prp.2013.09.002

2014-02-01

Abstract:

What problem does this paper attempt to address?

Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances

Sang Ho Lee,Won Douk Jang,Young Jun Yoon,Jae Hwa Seo,Hye Jin Mun,Min Su Cho,Jaewon Jang,Jin-Hyuk Bae,In Man Kang

DOI: https://doi.org/10.1109/access.2021.3068987

IF: 3.9

2021-01-01

IEEE Access

Abstract:In this work, a capacitorless one-transistor dynamic random access memory (1T-DRAM) based on a polycrystalline silicon (poly-Si) metal–oxide–semiconductor field-effect transistor was designed and analyzed through a technology computer-aided design (TCAD) simulation. A poly-Si thin film was utilized within the device because of several advantages, including its low fabrication cost and the feasibility of its use in high-density three-dimensional (3D) memory arrays. An asymmetric dual-gate structure is proposed to perform the write "1" operation and achieve high retention characteristics. The proposed 1T-DRAM cell demonstrates a high sensing margin of $8.73~mu text{A} / mu text{m}$ and a high retention time of 704.4 ms compared to previously reported 1T-DRAMs, even at a high temperature. In addition, the effect of grain boundaries on the memory performance of the proposed device was investigated, and the results validated the excellent reliability of its retention characteristics even in the presence of grain boundaries (>64 ms at $T =358$ K).

computer science, information systems,telecommunications,engineering, electrical & electronic
Simulation of capacitorless DRAM based on polycrystalline silicon with a vertical underlap structure and a separated channel layer

SEUNGJI BAE,Sang Ho Lee,Jin Park,Ga Eon Kang,Jun Hyeok Heo,So Ra Jeon,Min Seok Kim,Jeong Woo Hong,Jaewon Jang,Jin-Hyuk Bae,Sin-Hyung Lee,In Man Kang,Seung Ji Bae

DOI: https://doi.org/10.35848/1347-4065/ad2bbd

IF: 1.5

2024-03-14

Japanese Journal of Applied Physics

Abstract:In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on polycrystalline silicon (poly-Si) with a vertical underlap structure and a separated channel layer was designed and analyzed. The memory performance was improved by the vertical underlap structure and the region separated into channel and storage layers. The vertical underlap structure suppressed the recombination rate by storing the holes in the isolated body and could be more easily fabricated than a conventional underlap structure. The thicknesses of the vertical underlap structure and storage region were optimized to enhance the memory performance. When the grain boundary (GB) is centrally located, the proposed 1T-DRAM demonstrates a retention time and sensing margin of 3.618 s and 29.93 μA μm−1, respectively. Even when the GB is in the worst position at T = 358 K, the memory still shows a retention time of 1.991 s and a sensing margin of 4.51 μA μm−1.

physics, applied
A Novel 3D 2TnC FeRAM Architecture and Operation Scheme with Improved Disturbance for High-Bit-Density Dynamic Random-Access Memory

Ji-yeon Lee,Jiho Song,Seonjun Choi,Jae-min Sim,Yun-Heub Song

DOI: https://doi.org/10.3390/electronics13224474

IF: 2.9

2024-11-20

Electronics

Abstract:In this paper, we proposed the development of stackable 3D ferroelectric random-access memory (FeRAM), with two select transistors and n capacitors (2TnC), to address scaling limitations for bit density growth and the complicated manufacturing of 3D dynamic random-access memory (DRAM). The proposed 3D FeRAM has a 3D NAND-like architecture, with stacked metal–ferroelectric–metal (MFM) capacitors serving as memory cells in a unit string. A similar manufacturing process is used to achieve a cost-effective process and high bit density for next-generation DRAM applications. The two access transistors, string–select–line (SSL) and ground–select–line (GSL), are perfect string selections. We confirmed that the grounded back gate (GBG) of the proposed architecture can significantly improve the worst disturbance case compared to a floating back gate (FBG) like the 1TnC structure. Also, we confirmed the feasibility of performing the random-access operation during the read operation regardless of the data pattern of the selected string.

engineering, electrical & electronic,computer science, information systems,physics, applied
Capacitorless 1T-DRAM on crystallized poly-Si TFT

Min Soo Kim,Won Ju Cho

DOI: https://doi.org/10.1166/jnn.2011.4334

Abstract:The single-transistor dynamic random-access memory (1T-DRAM) using a polycrystalline-silicon thin-film transistor (poly-Si TFT) was investigated. A 100-nm amorphous silicon thin film was deposited onto a 200-nm oxidized silicon wafer via low-pressure chemical vapor deposition (LPCVD), and the amorphous silicon layer was crystallized via eximer laser annealing (ELA) with a KrF source of 248 nm wavelength and 400 mJ/cm2 power. The fabricated capacitor less 1T-DRAM on the poly-Si TFT was evaluated via impact ionization and gate-induced drain leakage (GIDL) current programming. The device showed a clear memory margin between the "1" and "0" states, and as the channel length decreased, a floating body effect which induces a kink effect increases with high mobility. Furthermore, the GIDL current programming showed improved memory properties compared to the impact ionization method. Although the sensing margins and retention times in both program methods are commercially insufficient, it was confirmed the feasibility of the application of 1T-DRAM operation to TFTs.
Bulk fin-type field-effect transistor-based capacitorless dynamic random-access memory with strong resistance to geometrical variations

Min Seok Kim,Sang Ho Lee,Jin Park,Ga Eon Kang,Jun Hyeok Heo,So Ra Jeon,SEUNGJI BAE,Jeong Woo Hong,Jaewon Jang,Jin-Hyuk Bae,Sin-Hyung Lee,In Man Kang,Seung Ji Bae

DOI: https://doi.org/10.35848/1347-4065/ad24a2

IF: 1.5

2024-02-22

Japanese Journal of Applied Physics

Abstract:In this study, a bulk fin-type FET (FinFET)-based capacitorless one-transistor dynamic random-access memory (1T-DRAM) was proposed. The fabrication process of the proposed 1T-DRAM was similar to that of a typical junctionless bulk FinFETs, except that the p-type doped body fin region operated as a charge storage region. The effects of the geometrical variations, such as the fin angle (θfin) variation and line edge roughness (LER), which are inevitable in fabrication, on the transfer characteristics and memory performance of the proposed 1T-DRAM were studied. θfin was varied from 90° to 80°, and 200 samples with the LER were analyzed. Results revealed that the transfer characteristics and memory performance were affected by geometrical variations. However, the proposed 1T-DRAM exhibited an excellent retention time in all cases because the charge storage region was separated from the region of operation.

physics, applied
1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

Takeya Hirose,Yuki Okamoto,Yusuke Komura,Toshiki Mizuguchi,Toshihiko Saito,Minato Ito,Kiyotaka Kimura,Hiroki Inoue,Tatsuya Onuki,Yoshinori Ando,Hiromi Sawai,Tsutomu Murakawa,Hitoshi Kunitake,Hajime Kimura,Takanori Matsuzaki,Makoto Ikeda,Shunpei Yamazaki

DOI: https://doi.org/10.1109/jeds.2024.3372053

2024-03-27

IEEE Journal of the Electron Devices Society

Abstract:We present a three-dimensional (3D) DRAM prototype, which is formed using oxide semiconductor FETs (OSFETs) monolithically stacked on a Si CMOS. The OSFETs are composed of a one-layer planar FET and two-layer vertical FETs (VFETs). The 1T1C memory cells in the VFET layers and a primary sense amplifier in the planar FET layer, which are formed using heterogeneous OSFETs, provide various circuit functions in the DRAM. The operation of the 3D DRAM in a 1-Mbit memory array is demonstrated for the first time. The results show that the proposed DRAM operates with read and write times of 60 ns and 50 ns, respectively. The leakage current of the memory cell is extremely low (comparable to an A/cell at 85°C), indicating that over 99% of the data are retained in the memory array after one hour at 85°C without refresh.

engineering, electrical & electronic
CMOS Logic and Capacitorless DRAM by Stacked Oxide Semiconductor and Poly-Si Transistors for Monolithic 3-D Integration

Ziheng Wang,Liankai Zheng,Zhiyu Lin,Jinxiu Zhao,Wei Tang,Linrun Feng,Zhe Liu,Xuefei Li,Xiaojun Guo,Mengwei Si

DOI: https://doi.org/10.1109/ted.2024.3418768

IF: 3.1

2024-07-26

IEEE Transactions on Electron Devices

Abstract:In this work, we demonstrate capacitorless dynamic random access memory (DRAM) and complementary metal-oxide–semiconductor (CMOS) logic circuits by vertically stacked ZnO transistors and low-temperature polycrystalline silicon (LTPS) transistors on the same chip. High-performance ZnO transistors are achieved by atomic layer deposition, exhibiting a field-effect mobility ( of 35.2 cm2/V s, subthreshold slope (SS) down to 71 mV/dec, and low off-state current (I A/ m. Such ZnO transistors are used as write transistors in the capacitorless two transistor (2T0C) DRAM cell and as n-FETs in the CMOS logic gates, achieving long retention time with memory window (MW) (I /I after s in DRAM (at a storage capacitance of 130 fF) and high inverter voltage gain of 181 V/V at VDD of 4.5 V in CMOS logic. Besides, a novel 2T0C DRAM with LTPS p-FET as read transistors is demonstrated, showing enhanced storage node voltage (V enabled by coupling capacitance, providing a promising approach to improve retention and reduce operating voltage for 2T0C DRAM.

engineering, electrical & electronic,physics, applied
A Novel Capacitorless 1T DRAM with Embedded Oxide Layer

Dongxue Zhao,Zhiliang Xia,Tao Yang,Yuancheng Yang,Wenxi Zhou,Zongliang Huo

DOI: https://doi.org/10.3390/mi13101772

IF: 3.4

2022-10-20

Micromachines

Abstract:A novel vertical dual surrounding gate transistor with embedded oxide layer is proposed for capacitorless single transistor DRAM (1T DRAM). The embedded oxide layer is innovatively used to improve the retention time by reducing the recombination rate of stored holes and sensing electrons. Based on TCAD simulations, the new structure is predicted to not only have the characteristics of fast access, random read and integration of 4F2 cell, but also to realize good retention and deep scaling. At the same time, the new structure has the potential of scaling compared with the conventional capacitorless 1T DRAM.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors

Juhee Jeon,Kyoungah Cho,Sangsig Kim

DOI: https://doi.org/10.3390/mi14061138

IF: 3.4

2023-05-29

Micromachines

Abstract:Challenges in scaling dynamic random-access memory (DRAM) have become a crucial problem for implementing high-density and high-performance memory devices. Feedback field-effect transistors (FBFETs) have great potential to overcome the scaling challenges because of their one-transistor (1T) memory behaviors with a capacitorless structure. Although FBFETs have been studied as 1T memory devices, the reliability in an array must be evaluated. Cell reliability is closely related to device malfunction. Hence, in this study, we propose a 1T DRAM consisting of an FBFET with a p+–n–p–n+ silicon nanowire and investigate the memory operation and disturbance in a 3 × 3 array structure through mixed-mode simulations. The 1T DRAM exhibits a write speed of 2.5 ns, a sense margin of 90 μA/μm, and a retention time of approximately 1 s. Moreover, the energy consumption is 5.0 × 10−15 J/bit for the write '1' operation and 0 J/bit for the hold operation. Furthermore, the 1T DRAM shows nondestructive read characteristics, reliable 3 × 3 array operation without any write disturbance, and feasibility in a massive array with an access time of a few nanoseconds.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
A high-performance capacitorless 1T-DRAM based on Z-shaped electron-hole bilayer TFET and SiGe memory window

Hu Liu,Xiaoyu Zhou,Yubin Li,Peifeng Li,Lei Pan,Pengyu Wang

DOI: https://doi.org/10.1088/1402-4896/ad9a23

2024-12-05

Physica Scripta

Abstract:In this paper, a novel capacitorless dynamic random access memory (Z-EHBTFET 1T-DRAM) is designed based on a Z-shaped electron-hole bilayer tunnel field-effect transistor and a SiGe memory window, and its storage performance is systematically analyzed and studied in detail through numerical simulation. A large number of electrons can be induced in the inverted L-shaped channel of Z-EHBTFET 1T-DRAM using gate 1 to create an electron-hole bilayer together with the source region, which increases the line tunneling electric field and ultimately improves the sensing margin (SM) and read current ratio (IR1/IR0). SiGe memory window helps to improve the storage capacity of holes, aiming to improve the retention time (RT) and SM. By optimizing the Ge-composition and width of the SiGe memory window, the thickness of the I-shaped channel, and the gate gap length, the SM of 2.03 μA/μm, IR1/IR0 of 3.58 × 104, and RT of 1.2 s can be obtained for Z-EHBTFET 1T-DRAM. Compared with most reported 1T1C-DRAMs and traditional 1T-DRAMs, it has better storage performance. Moreover, it can operate at a lower programming voltage while ensuring superior storage performance, making it has great application prospect in the low power consumption field.

physics, multidisciplinary
A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration

J. Wan,C. Le Royer,A. Zaslavsky,S. Cristoloveanu

DOI: https://doi.org/10.1109/led.2011.2176908

IF: 4.8157

2011-01-01

IEEE Electron Device Letters

Abstract:We demonstrate experimentally a capacitor-less one-transistor dynamic random access memory (DRAM) based on fully depleted silicon-on-insulator substrate. In our device, the charges are directly stored in front gate capacitor (CG) and read out through a fast feedback regeneration process. The simulated read/write times of our device reach below 1 ns, much faster than conventional 1T-1C DRAM. The read/write biasing voltages can be scaled down to 1.1 V, achieving long retention time (tre >; 5s).
A Semi-Floating Gate Memory with Tensile Stress for Enhanced Performance

Ying Yuan,Shuye Jiang,Bingqi Sun,Lin Chen,Hao Zhu,Qingqing Sun,David Wei Zhang

DOI: https://doi.org/10.3390/electronics8040414

IF: 2.9

2019-01-01

Electronics

Abstract:With the continuous scaling down of devices, traditional one-transistor one-capacitor dynamic random access memory (1T-1C DRAM) has encountered great challenges originated from the large-volume capacitor and high leakage current. A semi-floating gate transistor has been proposed as a capacitor-less memory with ultrafast speed and silicon-compatible technology. In this work, a U-shaped semi-floating gate memory with strain technology has been demonstrated through TCAD simulation. Ultra-high operation speed on a timescale of 5 ns at low operation voltages (≤ 2.0 V) has been obtained. And the tensile stress induced in its channel region by using contact etch stop layer (Si3N4 capper layer) was found to significantly improve the drain current by 12.07%. Furthermore, this device demonstrated a favorable retention performance with a retention time over 1 s, and its immunity to disturbance from bit-line has also been investigated that could maintain data under the continuous worst writing disturbance operation over 10 ms.
Nanoelectromechanical DRAM for Ultra-Large-scale Integration (ULSI)

JE Jang,SN Cha,Y Choi,TP Butler,DJ Kang,DG Hasko,JE Jung,JM Kim,GAJ Amaratunga

DOI: https://doi.org/10.1109/iedm.2005.1609323

2005-01-01

Abstract:A nanoelectromechanical (NEM) device developed for dynamic random access memory (DRAM) is reported. A vertical nanotube structure is employed to form the electromechanical switch and capacitor structure. The mechanical movement of the nanotube defines 'ON' and 'OFF' states and the electrical signals which result lead to charge storage in a vertical capacitor structure as in a traditional DRAM. The vertical structure contributes greatly to a decrease in cell dimension. The main concept of the NEM switch and capacitor can be applied to other memory devices as well
First Experimental Demonstration of 3D-Stacked 2T0C DRAM Cells Based on Indium Tin Oxide Channel

Chengru Gu,Qianlan Hu,Shenwu Zhu,Qijun Li,Min Zeng,Jiyang Kang,Anyu Tong,Yanqing Wu

DOI: https://doi.org/10.1109/led.2024.3443512

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:In this paper, we provide the first experimental demonstration of 3D-stacked 2T0C DRAM cells based on indium tin oxide (ITO) FETs. The 3D sequential integration process steps cause negligible performance degradation to the bottom ITO FET including on current, on-off ratio, subthreshold slope, and mobility, exhibiting excellent stability during the fabrication process of the top FET. Both layers of FETs show very small threshold voltage Vth shift under positive bias stress measurement for 3000 s, where the negative shift of Vth is only about 0.045 V and 0.08 V for the 1 st and 2 nd layer TFT, respectively. The 3D-stacked 2T0C DRAM cell consisting of two ITO FETs shows excellent data retention of around 1360 s and >10 11 endurance, rivaling the counterparts based on planar structures. These results indicate the great potential of the 3D-stacked 2T0C DRAM cells for future 3D DRAM applications.
A Novel 1T-DRAM Fabricated with 22 nm FD-SOI Technology

H. Xie,W. Zhang,P. Zhou,S. Cristoloveanu,Y. Xu,F. Y. Liu,J. Wan,Y Xu,FY Liu,J Wan

DOI: https://doi.org/10.1109/led.2024.3368522

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:A novel single-transistor dynamic random access memory (1T-DRAM) named IS-DRAM (in-situ sensing DRAM) which combines non-destructive reading with compact footprint is experimentally demonstrated with advanced 22nm fully depleted silicon-on-insulator (FD-SOI) technology. Unlike conventional 1T-DRAM using floating-body effect in SOI, the IS-DRAM stores charge in the substrate beneath the buried oxide (BOX). The stored charge modulates the drain current of the top Si transistor through interface coupling effect, and thus the state of the memory is “in-situ” read out. A buried accessing diode is formed in the substrate in order to write and erase the stored charge. Excellent writing time and retention reaching 10ns and 94ms at 85° respectively have been measured in IS-DRAM with 26 nm gate length.

engineering, electrical & electronic
Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing

Sang Ho Lee,Jin Park,Young Jun Yoon,In Man Kang

DOI: https://doi.org/10.3390/nano14020179

IF: 5.3

2024-01-12

Nanomaterials

Abstract:In this paper, we propose for the first time a self-refreshing mechanism in a junctionless field-effect transistor (JLFET) based on one-transistor dynamic random-access memory (1T-DRAM) with a silicon-on-insulator (SOI) structure. The self-refreshing mechanism continuously creates holes by appropriately generating impact ionization during the holding process through the application of an appropriate operation bias voltage. This leads to self-refreshing, which prevents the recombination of holes. When using the self-refreshing mechanism for the proposed device, the sensing margins were 15.4 and 12.7 μA/μm at 300 and 358 K, respectively. Moreover, the device achieved an excellent performance retention time of >500 ms, regardless of the temperature of the 1T-DRAM with a single gate. Furthermore, cell disturbance analysis and voltage optimization were performed to evaluate the in-cell reliability of the proposed device. It also showed excellent performance in terms of energy consumption and writing speed.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

Wei Li,Hongxia Liu,Shulong Wang,Shupeng Chen,Qianqiong Wang

DOI: https://doi.org/10.1186/s11671-017-2294-3

2017-09-06

Nanoscale Res Lett

Abstract:The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM). Recently, the tunneling FET (TFET) is applied in DRAM cell due to the low off-state current and high switching ratio. The dual-gate TFET (DG-TFET) DRAM cell with the capacitorless structure has the superior performance-higher retention time (RT) and weak temperature dependence. But the performance of TFET DRAM cell is sensitive to programming condition. In this paper, the guideline of programming optimization is discussed in detail by using simulation tool-Silvaco Atlas. Both the writing and reading operations of DG-TFET DRAM depend on the band-to-band tunneling (BTBT). During the writing operation, the holes coming from BTBT governed by Gate2 are stored in potential well under Gate2. A small negative voltage is applied at Gate2 to retain holes for a long time during holding "1". The BTBT governed by Gate1 mainly influences the reading current. Using the optimized programming condition, the DG-TFET DRAM obtains the higher current ratio of reading "1" to reading "0" (107) and RT of more than 2 s. The higher RT reduces the refresh rate and dynamic power consumption of DRAM.
3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories

Yuqing Zhang,Jiye Li,Jinxiong Li,Tengyan Huang,Yuhang Guan,Yuhan Zhang,Huan Yang,Mansun Chan,Xinwei Wang,Lei Lu,Shengdong Zhang

DOI: https://doi.org/10.1002/aelm.202300150

IF: 6.2

2023-06-24

Advanced Electronic Materials

Abstract:A self‐aligned top‐gate amorphous InGaZnO thin‐film transistor (TFT) based capacitor‐less embedded dynamic random access memory cell is demonstrated using the simplest 3‐masks process, exhibiting a retention time of > 500 s. Decent performances of sub‐100 nm devices are achieved by the strengthened gate controllability and modified channel properties, revealing the great mass‐production potential of oxide‐driven monolithic‐3D memories. The capacitor–less embedded dynamic random access memory (eDRAM) based on oxide semiconductor (OS) transistors exhibits a promising future and thus has lead to a growing demand for nanoscale OS thin–film transistors (TFTs). In this work, a self–aligned top–gate (SATG) amorphous InGaZnO (a‐IGZO) TFT is demonstrated by using the simplest 3‐masks (3M) process, and the downscaling‐related issues are carefully addressed to strengthen its back–end–of–line (BEOL) compatibility and mass producibility. The gate insulator (GI) and associated interface defects of the TFTs are jointly optimized with 4–nm atomic‐layer‐deposited (ALD) AlOx on the pre‐oxidized a‐IGZO. The defects in a‐IGZO channel are further manipulated with a rapid thermal anneal (RTA) in oxygen. By virtue of the strengthened gate controllability and modified channel properties, the fabricated TFT with 97‐nm gate length (Lg) exhibits decent performance, such as a maximum on–state current (ION) of 32.4 μA μm−1, as well as clear linear and saturation characteristics. Based on such 3M SATG a‐IGZO TFTs with high device performance and inherently minimal parasitic capacitances, the developed capacitor‐less eDRAM bit cell achieves a wide sensing margin and a long retention time of over 500 s. A highly manufacturable oxide TFT technology for high–performance and high–density monolithic–3D (M3D) integration is thus well established.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Improvement in Retention Time of Capacitorless DRAM with Access Transistor

Md. Hasan Raza Ansari,Jawar Singh

DOI: https://doi.org/10.48550/arXiv.1910.03907

2019-10-09

Abstract:In this paper, we propose a Junctionless (JL)/Accumulation Mode (AM) transistor with an access transistor (JL in series with JL/AM transistor) based capacitorless Dynamic Random Access Memory (1TDRAM) cell. The JL transistor overcomes the problem of ultrasharp p-n junction associated with conventional Metal-Oxide-Semiconductor (MOS) in nanoscale regime. The access transistor (AT) is utilized to reduces the leakage, and thus, improves the Retention Time (RT) and Sense Margin (SM) of the proposed capacitorless DRAM cell. Thus, the proposed DRAM cell achieved a maximum SM of ~4.6 {\mu}A/{\mu}m with RT of ~6.5 s for a gate length (Lg) of 100nm. Further, this topology shows better gate length scalability with a fixed gate length of AT and achieves RT of ~100 ms and ~10 ms for a scaled gate length of 10 nm at 27 °C and 85 °C, respectively.

Mesoscale and Nanoscale Physics,Information Theory
High Performance Si-MoS2 Heterogeneous Embedded DRAM

Kai Xiao,Jing Wan,Hui Xie,Yuxuan Zhu,Tian,Wei Zhang,Yingxin Chen,Jinshu Zhang,Lihui Zhou,Sheng Dai,Zihan Xu,Wenzhong Bao,Peng Zhou

DOI: https://doi.org/10.1038/s41467-024-54218-w

IF: 16.6

2024-01-01

Nature Communications

Abstract:Embedded Dynamic RAM (eDRAM) has become a key solution for large-capacity cache in high-performance processors. A heterogeneous two transistor capacitorless eDRAM (2T-eDRAM) that combines silicon and molybdenum disulfide (MoS2) is reported to address the short retention issue in conventional gain cell (GC) eDRAMs meanwhile eliminate the pillar capacitor in one transistor and one capacitor (1T1C) eDRAMs. The MoS2 write transistor with low OFF current (IOFF) enables long data retention, while the Si read transistor offers high drive current and logic compatibility. This combination enhances data retention by 1000 times and sense margin by 100 times respectively compared to full Si and MoS2 counterparts. A three-dimensional (3D) design stacking MoS2 on Si is demonstrated with back-end-of-line (BEOL) process to double integration density. With 6000 s data retention, 35 μA/μm sense margin, 5 ns access speeds, 3D integration and CMOS logic compatibility, this Si-MoS2 eDRAM marks a significant advancement in memory technology.

Use of automated image analysis in evaluation of Mesothelioma Tissue Microarray (TMA) from National Mesothelioma Virtual Bank.

Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances

Simulation of capacitorless DRAM based on polycrystalline silicon with a vertical underlap structure and a separated channel layer

A Novel 3D 2TnC FeRAM Architecture and Operation Scheme with Improved Disturbance for High-Bit-Density Dynamic Random-Access Memory

Capacitorless 1T-DRAM on crystallized poly-Si TFT

Bulk fin-type field-effect transistor-based capacitorless dynamic random-access memory with strong resistance to geometrical variations

1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

CMOS Logic and Capacitorless DRAM by Stacked Oxide Semiconductor and Poly-Si Transistors for Monolithic 3-D Integration

A Novel Capacitorless 1T DRAM with Embedded Oxide Layer

Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors

A high-performance capacitorless 1T-DRAM based on Z-shaped electron-hole bilayer TFET and SiGe memory window

A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration

A Semi-Floating Gate Memory with Tensile Stress for Enhanced Performance

Nanoelectromechanical DRAM for Ultra-Large-scale Integration (ULSI)

First Experimental Demonstration of 3D-Stacked 2T0C DRAM Cells Based on Indium Tin Oxide Channel

A Novel 1T-DRAM Fabricated with 22 nm FD-SOI Technology

Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories

Improvement in Retention Time of Capacitorless DRAM with Access Transistor

High Performance Si-MoS2 Heterogeneous Embedded DRAM