Abstract:The IGZO (InGaZnO)-based two-transistor zero-capacitor(2T0C) DRAM has attracted much attention as an alternative memory to overcome the scale-down limit of current 1T1C DRAM due to its low power consumption and monolithic 3D stacking capability. In particular, its low power consumption and the feasibility of low temperature process make it highly implementable for 3D DRAM. For operating the 2T0C DRAM, four metal lines are necessary, i.e., write word line and write bit line (WBL) for operating write transistor (WTR), and read word line and read bit line (RBL) for operating read transistor (RTR). In this study, we propose a 3-terminal 2T0C DRAM to enhance its memory characteristics, where RBL was combined with WBL, enabling 2T0C memory operation with only three metal lines as shown in Fig. 1(b). In addition, we investigated the dependency of retenetion time of the proposed 2T0C DRAM on channel length. In particular we evaluated the dependency of the sneak current of 2T0C DRAM on off-current of transistor. For the fabrication of 3-terminal IGZO 2T0C DRAM, a top gate IGZO transistor was fabricated using RF sputtering and two transistors were connected by storage node and bit line bridge as shown in Fig. 1(d).The storage node was formed by connecting the gate of RTR to drain of WTR. And source electrodes of both transistors were coupled. To determine the voltage values for memory operation, the transfer curve of each transistor was characterized and the threshold voltages for both RTR and WTR were around 1 V. The write and read voltages were set to 3 and 2 V, respectively. The retention time was measured by performing periodic read operations after writing and measuring the RTR currents. In addition, the retention time of transistors for varying channel length and gate capacitance was characterized. The retention time was defined as the time to be taken for decreasing the currents by 90 %. Furthermore, the disturbance of 2T0C DRAM with 2x2 array structure was investigated. The RTR currents of selected cells were measured depending on the memory state of adjacent cells. It was found that the retention times of transistors with 10- and 100-um RTR channel lengths were approximately 15 and 30 seconds, respectively. It was observed that the memory state was not changed from “0“ to “1“ by disturbant currents, but, RTR currents of “0“ state cell increased slightly when an adjacent cell was turned on. However, as shown in Fig.1(i) and (j), when off-currents of transistor of 2T0C DRAM decreased from 20 nA to 200 pA, it was confirmed the sneak current of 2T0C decreased. Finally, several technical apporaches how to suppress the disturbant currents will be presented in detail. Acknowledgement This research was supported by BrainKorea21 Four. Figure 1

First Experimental Demonstration of 3D-Stacked 2T0C DRAM Cells Based on Indium Tin Oxide Channel

First Demonstration of Stacked 2T0C-DRAM Bit-Cell Constructed by Two-Layers of Vertical Channel-All-Around IGZO FETs Realizing 4F2 Area Cost

3D-Stacked 2T0C-DRAM Cells Using Al2O3/TiO2-Based 2DEG FETs

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors with Record Data Retention and Reduced Write Latency

Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

A 3D Stackable 1T1C DRAM: Architecture, Process Integration and Circuit Simulation

First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s

First Demonstration of Dual-Gate IGZO 2T0C DRAM with Novel Read Operation, One Bit Line in Single Cell, ION=1500 Μa/μm@vds=1v and Retention Time>300s

CMOS Logic and Capacitorless DRAM by Stacked Oxide Semiconductor and Poly-Si Transistors for Monolithic 3-D Integration

30 Mb/mm<sup>2</sup>/layer 3D eDRAM Computing-in-Memory with Embedded BEOL Peripherals and Local Layer-wise Calibration based on First-Demonstrated Vertically-stacked CAA-IGZO 4F<sup>2</sup> 2T0C Cell

3-Terminal Igzo FET Based 2T0C DRAM Combined Bit-Line Structure

Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory

A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

Counteractive Coupling IGZO/CNT Hybrid 2T0C DRAM Accelerating RRAM-based Computing-In-Memory Via Monolithic 3D Integration for Edge AI

Cell Structure and Process Integration of a Novel 2T0C Technology for High-Density Dram Application

3D Stackable CNTFET/RRAM 1T1R Array with CNT CMOS Peripheral Circuits as BEOL Buffer Macro for Monolithic 3D Integration with Analog RRAM-based Computing-In-Memory

A Novel 3D 2TnC FeRAM Architecture and Operation Scheme with Improved Disturbance for High-Bit-Density Dynamic Random-Access Memory