Abstract:The smart edge nodes require efficient matrix-vector multiplications for local deep neural network (DNN) inference. Benefiting from its high density and CMOS compatibility, the eDRAM-based computing-in-memory (CIM) [1] –[4], especially with multi-level cells (MLCs) [4], attracts rising attention. However, the performance of prior MLCeDRAM CIM is severely limited by the inconsistency of weight representations during the programming and computing: weights are programmed as fixed voltages while transistor currents are used for computation. Thus, the programming of MLCs requires calibration due to the nonlinear transistor I-V, which can be extremely complicated in the presence of $V_{T H}$ variations. Furthermore, the computing precision is severely degraded by $\mathrm{V}_{\mathrm{TH}}$ variations when small computing currents are used for high parallelism. To fundamentally surmolunt this dilemma, we propose the first currentprogramming eDRAM CIM that unifies the weight programming and computing in the current domain. The enabling technique is a novel 3T1C eDRAM cell (Fig. 1, top right). It confers several key merits: 1) the cell is programmed by the weight current directly with the selfcalibrated voltage generated on the storage capacitor; it essentially stores the weight current instead of a fixed voltage, thus mitigating $V_{\text {TH}}$ variation and nonlinear transistor I-V impacts; 2) a dynamiccascoded read structure is proposed to significantly reduce the V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">B</inf> sensitivity while not requiring any bias voltage; 3) thanks to the accurately programmed cell, it supports MLC operation (8 current levels) without any calibration, largely increasing density; 4) a voltage-current two-step programming scheme significantly boosts the sub- $\mu \mathrm{A}$ current-weight writing speed. Combining these merits, the proposed eDRAM cell is naturally immune to transistor-level nonidealities, thus allowing a small LSB weight current of only 100nA. A $4 \mathrm{~b}$ CIM cell composed of 2MLCs is developed to support 4bsigned weights. It contains 15 current levels ranging from -700nA to 700nA. Fabricated in a $65 \mathrm{~nm}$ CMOS, the prototype achieves the highest macro-level 4b-MAC energy efficiency of 233-305TOPS/W among eDRAM CIMs.

30 Mb/mm<sup>2</sup>/layer 3D eDRAM Computing-in-Memory with Embedded BEOL Peripherals and Local Layer-wise Calibration based on First-Demonstrated Vertically-stacked CAA-IGZO 4F<sup>2</sup> 2T0C Cell

Low-Power and Scalable BEOL-Compatible IGZO TFT eDRAM-Based Charge-Domain Computing

First Demonstration of Stacked 2T0C-DRAM Bit-Cell Constructed by Two-Layers of Vertical Channel-All-Around IGZO FETs Realizing 4F2 Area Cost

High-density Energy-Efficient Charge-Domain Computing Based on CAA-IGZO TFT with BEOL-compatible 3D Integration

A Calibration-Free 15-level/Cell eDRAM Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC achieving 233-to-304-TOPS/W 4b MAC

First Experimental Demonstration of 3D-Stacked 2T0C DRAM Cells Based on Indium Tin Oxide Channel

Counteractive Coupling IGZO/CNT Hybrid 2T0C DRAM Accelerating RRAM-based Computing-In-Memory Via Monolithic 3D Integration for Edge AI

Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

Monolithic 3-D Integration of Counteractive Coupling IGZO/CNT Hybrid 2T0C DRAM and Analog RRAM-Based Computing-In-Memory

3D Stackable CNTFET/RRAM 1T1R Array with CNT CMOS Peripheral Circuits as BEOL Buffer Macro for Monolithic 3D Integration with Analog RRAM-based Computing-In-Memory

1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

Low-Power and Scalable Retention-Enhanced IGZO TFT Edram-Based Charge-Domain Computing

A 3D Stackable 1T1C DRAM: Architecture, Process Integration and Circuit Simulation

A Hybrid Computing-In-Memory Architecture by Monolithic 3D Integration of BEOL CNT/IGZO-based CFET Logic and Analog RRAM

Area-and Power-Efficient Compute-in-Memory Macro Based on Oxide Semiconductor 2T0C Edram with Cell-System Co-Optimization

Cryogenic quasi-static embedded DRAM for energy-efficient compute-in-memory applications

3D-Stacked 2T0C-DRAM Cells Using Al2O3/TiO2-Based 2DEG FETs

First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s

Fully Integrated 3-D Stackable CNTFET/RRAM 1T1R Array As BEOL Buffer Macro for Monolithic 3-D Integration with Analog RRAM-Based Computing-in-Memory