Abstract:Conventional DRAM, consisting of one transistor and one capacitor (1T1C), requires periodic data refresh processes due to its limited retention time and data-destructive read operation. Here, we propose and demonstrate a novel 3D-DRAM memory scheme available with a single transistor and a single ferroelectric field-effect transistor (FeFET) DRAM (2T0C-FeDRAM), which offers extended retention time and non-destructive read operation. This architecture uses a back-end-of-line (BEOL)-compatible amorphous oxide semiconductor (AOS) that is suitable for increasing DRAM cell density. Notably, the device structures of a double gate a-ITZO/a-IGZO FeFET, used for data storage and reading, are engineered to achieve an enlarged memory window (MW) of 1.5 V and a prolonged retention time of 10 4 s. This is accomplished by a double gate and an a-ITZO/a-IGZO heterostructure channel to enable efficient polarization control in hafnium-zirconium oxide (HZO) layers. We present successful program/erase operations of the double gate a-ITZO/a-IGZO FeFET through incremental step pulse programming (ISPP), demonstrating multi-level states with remarkable retention characteristics. Most importantly, we perform 2T0C-FeDRAM operations by electrically connecting the double gate a-ITZO/a-IGZO FeFET and the a-ITZO FET. Leveraging the impressive performance of the double gate a-ITZO/a-IGZO FeFET technology, we have effectively showcased an exceptionally record-long retention time exceeding 2000 s and 4-bit multi-level states, positioning it as a robust contender among emerging memory solutions in the era of artificial intelligence.

A Novel 1T-DRAM Fabricated with 22 nm FD-SOI Technology

Design of a Novel One Transistor-Dram Based on Bulk Silicon Substrate

1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

A Novel Capacitorless 1T DRAM with Embedded Oxide Layer

A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation

A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration

Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances

A Novel 1T-1D DRAM Cell for Embedded Application

A Novel CMOS FEOL-Embedded Asymmetrical FET for Capacitor-less and Long-Retention DRAM Based on 300mm Logic Foundry Platform

High Density Capacitorless Dynamic Random Access Memory Cell with Quasi Silicon-on-Insulator Structure Based on Bulk Substrate

Innovative Capacitorless SOI DRAMs

High Performance Si-MoS2 Heterogeneous Embedded DRAM

Simulation of capacitorless DRAM based on polycrystalline silicon with a vertical underlap structure and a separated channel layer

First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s

Special Memory Mechanisms in SOI Devices

A 2T Dual Port Capacitor-Less DRAM

Novel 2T gain cell with enhanced retention time for embedded DRAM application

A Semi-Floating Gate Memory with Tensile Stress for Enhanced Performance

Design of a Novel High Speed Embedded DRAM

Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors with Record Data Retention and Reduced Write Latency

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications