Abstract:The MoS2/Ba0.6Sr0.4TiO3‐FETs exhibited remarkable non‐volatile memory properties and memristive behavior, which can be switched by gate voltage. As a non‐volatile memory, it delivers low operating energy at ≈0.3 pJ per spike. Using the historic memory behaviors, a cryptosystem is developed with auto‐generated reading log which is tamper‐resistant at hardware level. Moreover, the synaptic functions are also realized on the device such as the short‐term potentiation/depression and gating‐depending synaptic plasticity. To overcome the von Neumann bottleneck between memory and computing, the novel architectures with computing in‐memory are paid much attention and expected to be compatible with digital logic computing and/or analog brain‐inspired neuromorphic computing. Herein, by combining the Ba0.6Sr0.4TiO3 (BST) ferroelectric film and MoS2 layered semiconductor, a non‐volatile memory is constructed, which deliver the gate‐switchable function between the digital and analog functionality modes. The on/off ratio, subthreshold swing, and carrier mobility of MoS2/BST ferroelectric field‐effect transistor (FeFET) are 4.95×106, 68 mV dec−1, and 16.7 cm2 V−1 s−1, respectively. By a small electrical stimulation, the device demonstrates remarkable non‐volatile memory properties, including robust long‐term retention of ≈3000 s, superior endurance over 34 000 cycles, low operating energy at ≈0.3 pJ per spike. By a large electrical stress, it exhibits well memristive behavior and gating history dependent accumulation/diminution effect, which is attributed to the charge dynamic trapping/de‐trapping activation at the MoS2/BST interface. Following the historic memory behaviors, a cryptosystem is developed with auto‐generated reading log which is tamper‐resistant at hardware level. Moreover, the synaptic functions are realized on the device such as the short‐term potentiation/depression and gating‐depending synaptic plasticity. This study shows the opportunities of multi‐functionalities integration in a single FeFET device.

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

High Performance Si-MoS2 Heterogeneous Embedded DRAM

Multifunctional Logic‐in‐Memory Cell Based on Wafer‐Scale MoS2 Thin Films Prepared by Atomic Layer Deposition

High-Performance C60 Coupled Ferroelectric Enhanced MoS2 Nonvolatile Memory.

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures

Realizing Wafer‐Scale and Low‐Voltage Operation MoS2 Transistors Via Electrolyte Gating

2D Materials-Based Static Random-Access Memory

Design of High Performance MoS2-based Non-Volatile Memory Via Ion Beam Defect Engineering

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS 2 Channels

Floating Gate Memory-Based Monolayer MoS2 Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics.

Gate‐Switchable BST Ferroelectric MoS2 FETs for Non‐Volatile Digital Memory and Analog Memristor

Construction of High Field-Effect Mobility Multilayer MoS2 Field-Effect Transistors with Excellent Stability Through Interface Engineering

2D Dual Gate Field‐Effect Transistor Enabled Versatile Functions

Analog and Logic Circuits Fabricated on a Wafer-Scale Two-Dimensional Semiconductor

Pass‐transistor Logic Circuits Based on Wafer‐Scale Two‐Dimensional Semiconductors

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Logic-in-memory based on an atomically thin semiconductor

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts