Abstract:Low frequency noise behaviors of partially depleted silicon-on-insulator (PDSOI) n-channel metal-oxide semiconductors (MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from 44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm(2)/V.s to 363.65 cm(2)/V.s. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7 x 10(-10) V-2.Hz(-1) and 2.7 x 10(-8) V-2 .Hz(-1), respectively, while the extracted average trap density in the buried oxide increases from 1.42 x 10(17) cm(-3).eV(-1) to 6.16 x 10(18) cm(-3).eV(-1). Based on carrier mobility fluctuation theory, the extracted average Hooge's parameter in these devices increases from 3.92 x 10(-5) to 1.34 x 10(-2) after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 M.rad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are 10.82 V and 31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.

The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.

Substrate Effect on Radiation-Induced Charge Trapping in Buried Oxide for Partially-Depleted SOI NMOSFET

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

Impact of Back-gate Bias and Body-tie on the DSOI SRAMs under Total Ionizing Dose Irradiation

An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film PDSOI Technology: Phenomena, Analyses, and Models

Total Ionizing Dose (TID) Effect and Single Event Effect (SEE) in Quasi-Soi Nmosfets

Comparison of the Total Dose Responses of Fully Depleted SOI Nmosfets with Different Geometries for the Worst Case Bias Conditions

Low Frequency Noise and Radiation Response in the Partially Depleted SOI MOSFETs with Ion Implanted Buried Oxide

The Effects of Displacement Damage on Ionization Effect in SiO2 Layer of Bipolar Transistor

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Heavy ion induced single-event-transient effects in nanoscale ferroelectric vertical tunneling transistors by TCAD simulation

Total Ionizing Dose Effects of 60co Γ-Ray Radiation on Split-Gate SiC MOSFETs

Radiation Effects on the Low Frequency Noise in Partially Depleted Silicon on Insulator Transistors

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs

A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs