Abstract:With the rapid development of the aviation industry, an increasing number of metal oxide semiconductor field effect transistors (MOSFETs) are being used in aerospace equipment. The total ionizing dose (TID) test has been developed for silicon power devices to evaluate their space usage capabilities. To evaluate the TID tolerance of silicon carbide (SiC) devices, two 1200V SiC MOSFET power devices with planar and trench structures were aged gamma irradiation environment, and the degradation of static properties, such as the transfer characteristics, output characteristics, and breakdown voltage were analyzed. The comparison of TID effects was made between planar and trench MOSFETs under gate bias (i.e., $\mathrm{V}_{\text{gs}} = 18$ V and $\mathrm{V}_{\text{ds}} = 0$ V) and zero bias ( $\mathrm{V}_{\text{gs}} = 0$ V and $\mathrm{V}_{\text{ds}} = 18$ V) conditions. The experimental results show that: (1) The trench MOSFET was more sensitive to TID effects, due to its unique structure and thick gate oxide. (2) The severity of TID effect under gate bias was mainly caused by the electric field within the gate oxide, which exacerbated the TID effect as compared to zero bias. (3) The degradation mechanisms of TID effect with increasing dose is illustrated, and several radiation hardening methods are proposed, including thinning the gate oxide, improving the quality of the gate oxide, and using insulating dielectrics with a wider bandgap instead of SiO2. Therefore, this work will be helpful to the explanation and radiation hardening of 1200V SiC MOSFET power devices under TID effects.

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Total-Ionizing-Dose Response of MoS2 Transistors with ZrO2 and h-BN Gate Dielectrics

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Total ionizing dose effects of 60Co-γ ray radiation on SiC MOSFETs with different gate oxide thickness

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Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench

Total Ionizing Effects on Static Characteristics of 1200V SiC MOSFET Power Devices with Planar and Trench Structures

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultra-High Doses

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Bias and Geometry Dependence of Total-Ionizing-dose Effects in SOI FinFETs

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Comparison of the Total Dose Responses of Fully Depleted SOI Nmosfets with Different Geometries for the Worst Case Bias Conditions

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Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate

The Degradation and Recovery of 1200-V SiC MOSFET with Different Total Ionizing Doses

Investigation of total ionizing dose effects in 4H-SiC power MOSFET under gamma ray radiation

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET