Abstract:Using low doses of helium ions, researchers enhanced single‐layer MoS2 conductivity by inducing defects and altering substrate charge. Substrate type notably influenced defect creation. It is concluded that device property changes resulted mostly from ion‐substrate interactions, not direct ion‐MoS2 impacts. This controlled ion technique enables precise tuning of 2D material electronics, crucial for applications in challenging environments like space. Current value at highest gate voltage as a function of He+ ion dose for MoS2 on h‐BN and SiO2 substrate. This study explores defect engineering in 2D materials using ion beam irradiation to modify the electrical and optical properties with potential in advancing quantum electronics and photonics. Helium and neon ions ranging from 5 to 7.5 keV are employed to manipulate charge transport in monolayer molybdenum disulfide (MoS2). In situ electrical characterization occurs without vacuum breakage post‐irradiation. Raman and photoluminescence spectroscopy quantify ion irradiation's impact on MoS2. Small doses of helium ion irradiation enhance monolayer MoS2 conductivity in field‐effect transistor geometry by inducing doping and substrate charging. Findings reveal a strong correlation between the electrical properties of MoS2 and the primary ion used, as well as the substrate on which the irradiation occurred. Using hexagonal boron nitride (h‐BN) as a buffer layer between MoS2 flake and SiO2 substrate yields distinct alterations in electrical behavior subsequent to ion irradiation compared to the MoS2 layer directly interfacing with SiO2. Molecular dynamics simulations and density functional theory provide insight into experimental results, emphasizing substrate influence on measured electrical properties post‐ion irradiation.

Total-Ionizing-Dose Response of MoS2 Transistors with ZrO2 and h-BN Gate Dielectrics

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS 2 -Interlayer-mos 2 Tunneling Junctions

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors

Tuning the Electronic Characteristics of Monolayer MoS2‐Based Transistors by Ion Irradiation: The Role of the Substrate

Electrical Characterization of Back-Gated Bi-Layer MoS2 Field-Effect Transistors and the Effect of Ambient on Their Performances

Total-Ionizing-Dose Radiation Effect on Dynamic Threshold Voltage in p-GaN Gate HEMTs

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

PBTI Investigation of MoS2 N-Mosfet with Al2O3 Gate Dielectric

Electronic Properties of Multilayer MoS2 Field Effect Transistor with Unique Irradiation Resistance

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R}_{\textsc{on}}$ in GaN MOSHEMT With ZrO$_{\text{2}}$ Gate Dielectric

Study of Total Ionizing Dose Radiation Effects on Enclosed Gate Transistors in A Commercial Cmos Technology

Investigation of negative differential resistance in metal-edge-contact MoS2 field effect transistor

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.

Temperature-dependent Transport and Hysteretic Behaviors Induced by Interfacial States in MoS2 Field-Effect Transistors with Lead-Zirconate-titanate Ferroelectric Gating.

Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS2 Field-Effect Transistors with Buried Local Back-Gate Structure

Total Dose Effect on Mismatch Performance of 0.18 Μm MOS Differential Pair Transistors

Comparison of the Total Dose Responses of Fully Depleted SOI Nmosfets with Different Geometries for the Worst Case Bias Conditions