Abstract:Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultane-ously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabri-cating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the defor-mation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS 2 -Interlayer-mos 2 Tunneling Junctions

Total-Ionizing-Dose Response of MoS2 Transistors with ZrO2 and h-BN Gate Dielectrics

Electronic Properties of Multilayer MoS2 Field Effect Transistor with Unique Irradiation Resistance

MoS2/Si Tunnel Diodes Based on Comprehensive Transfer Technique

Layer thickness influenced irradiation effects of proton beam on MoS 2 field effect transistors

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Tuning the Electronic Characteristics of Monolayer MoS2‐Based Transistors by Ion Irradiation: The Role of the Substrate

Single-layer $1T'$-MoS$_2$ under electron irradiation from $ab$ $initio$ molecular dynamics

Electron-doping-enhanced Trion Formation in Monolayer Molybdenum Disulfide Functionalized with Cesium Carbonate.

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Transport properties of multilayer NbxMo1−xS2/MoS2 in-plane heterostructure tunnel FETs on hexagonal boron nitride substrate

Impact of Proton-Radiation-Induced Spacer Damage on the Dc Characteristics Degradation in Deep-Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Repairable Polymer Solid Electrolyte Gated MoS<sub>2</sub> Field Effect Devices with Large Radiation Tolerance

Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors

Mechanically Modulated Tunneling Resistance in Monolayer MoS2

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Investigations on proton-irradiation-induced spacer damage in deep-submicron MOSFETs

Manipulation of the electrical and memory properties of MoS$_2$ field-effect transistors by highly charged ion irradiation

Repairable Polymer Solid Electrolyte Gated MoS 2 Field Effect Devices with Large Radiation Tolerance

Reduced interface effect of proton beam irradiation on the electrical properties of WSe2/hBN field effect transistors