Abstract:2D materials exhibit intriguing electrical and optical properties, making them promising candidates for next-generation nanoelectronic devices. However, the high contact resistance of 2D materials to electrode material often limits the ultimate performance and potential of 2D materials and devices. In this work, we demonstrate a localized femtosecond (fs) laser irradiation process to substantially minimize the resistance of MoS2-metal contacts. A reduction of the contact resistance exceeding three orders of magnitude is achieved for mechanically exfoliated MoS2, which remarkably improves the overall FET performance. The underlying mechanisms of resistance reduction are the removal of organic contamination induced by the transfer process, as well as the lowering of Schottky barrier resistance (RSB) attributed to interface Fermi level pinning (FLP) by Au diffusion, and the lowering of interlayer resistance (Rint) due to interlayer coupling enhancement by Au intercalation under fs laser irradiation. By taking advantage of the improved MoS2-metal contact behavior, a high-performance MoS2 photodetector was developed with a photoresponsivity of 68.8 A W-1 at quite a low Vds of 0.5 V, which is ∼80 times higher than the pristine multilayer photodetector. This contamination-free, site-specific, and universal photonic fabrication technique provides an effective tool for the integration of complex 2D devices, and the mechanism of MoS2-metal interface modification reveals a new pathway to engineer the 2D material-metal interface.

Repairable Polymer Solid Electrolyte Gated MoS 2 Field Effect Devices with Large Radiation Tolerance

Repairable Polymer Solid Electrolyte Gated MoS2 Field Effect Devices with Large Radiation Tolerance

Radiation-hardened and Repairable MoS$_2$ Field Effect Devices with Polymer Solid Electrolyte Gates

Highly Radiation-Tolerant Polymer Field-Effect Transistors with Polystyrene Dielectric Layer

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS 2 -Interlayer-mos 2 Tunneling Junctions

Radiation-hardened and Repairable Integrated Circuits Based on Carbon Nanotube Transistors with Ion Gel Gates

Electronic Properties of Multilayer MoS2 Field Effect Transistor with Unique Irradiation Resistance

Radiation-Hard and Repairable Complementary Metal-Oxide-Semiconductor Circuits Integrating N-Type Indium Oxide and P-Type Carbon Nanotube Field-Effect Transistors.

Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors.

Flexible Solid-Electrolyte-Gated-Dielectric Carbon Nanotube Thin Film Transistors and Integrated Circuits with the Recorded Radiation Tolerance and Reparability

Femtosecond Laser Irradiation-Mediated MoS 2 –Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors

Updated Structure of Vertical Double-Diffused MOSFETs for Irradiation Hardening Against Single Events

Total Ionizing Dose Hardening of Planar SOI MOSFET through An Optimal Design Combining Embedded Void and H-gate Structures

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

A New Type of Si-Based MOSFET for Radiation Reinforcement

Performance Upper Limit of Sub-10 nm Monolayer MoS<sub>2</sub> Transistors with MoS<sub>2</sub>-Mo Electrodes

Enhanced Electrical Properties Of Lithography-Free Fabricated Mos2 Field Effect Transistors With Chromium Contacts

Flexible High-Temperature MoS 2 Field-Effect Transistors and Logic Gates

Ultra-Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics

2D Materials As Semiconducting Gate for Field-Effect Transistors with Inherent Over-Voltage Protection and Boosted ON-current

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture