Abstract:According to the continuous development of metal-oxide semiconductor (MOS) fabrication technology, transistors have naturally become more radiation-tolerant through steadily decreasing gate-oxide thickness, increasing the tunneling probability between gate-oxide and channel. Unfortunately, despite this radiation-hardened property of developed transistors, the field of nuclear power plants (NPPs) requires even higher radiation hardness levels. Particularly, total ionizing dose (TID) of approximately 1 Mrad could be required for readout circuitry under severe accident conditions with 100 Mrad around a reactor in-core required. In harsh radiating environments such as NPPs, sensors such as micro-pocket-fission detectors (MPFD) would be a promising technology to be operated for detecting neutrons in reactor cores. For those sensors, readout circuits should be fundamentally placed close to sensing devices for minimizing signal interferences and white noise. Therefore, radiation hardening ability is necessary for the circuits under high radiation environments. This paper presents various integrated circuit designs for a radiation hardened charge-sensitive amplifier (CSA) by using SiGe 130 nm and Si 180 nm fabrication processes with different channel widths and transistor types of complementary metal-oxide-semiconductor (CMOS) and bipolar CMOS (BiCMOS). These circuits were tested under γ–ray environment with Cobalt-60 of high level activity: 490 kCi. The experiment results indicate amplitude degradation of 2.85%–34.3%, fall time increase of 201–1730 ns, as well as a signal-to-noise ratio (SNR) of 0.07–11.6 dB decrease with irradiation dose increase. These results can provide design guidelines for radiation hardening operational amplifiers in terms of transistor sizes and structures.

Radiation-hardened and Repairable MoS$_2$ Field Effect Devices with Polymer Solid Electrolyte Gates

Repairable Polymer Solid Electrolyte Gated MoS<sub>2</sub> Field Effect Devices with Large Radiation Tolerance

Repairable Polymer Solid Electrolyte Gated MoS 2 Field Effect Devices with Large Radiation Tolerance

Radiation-Hard and Repairable Complementary Metal-Oxide-Semiconductor Circuits Integrating N-Type Indium Oxide and P-Type Carbon Nanotube Field-Effect Transistors.

Radiation-hardened and Repairable Integrated Circuits Based on Carbon Nanotube Transistors with Ion Gel Gates

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS 2 -Interlayer-mos 2 Tunneling Junctions

Highly Radiation-Tolerant Polymer Field-Effect Transistors with Polystyrene Dielectric Layer

Electronic Properties of Multilayer MoS2 Field Effect Transistor with Unique Irradiation Resistance

Flexible Solid-Electrolyte-Gated-Dielectric Carbon Nanotube Thin Film Transistors and Integrated Circuits with the Recorded Radiation Tolerance and Reparability

Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors.

Femtosecond Laser Irradiation-Mediated MoS 2 –Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors

Total Ionizing Dose Hardening of Planar SOI MOSFET through An Optimal Design Combining Embedded Void and H-gate Structures

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Ultra-Strong Comprehensive Radiation Effect Tolerance in Carbon Nanotube Electronics

Enhanced Electrical Properties Of Lithography-Free Fabricated Mos2 Field Effect Transistors With Chromium Contacts

A New Type of Si-Based MOSFET for Radiation Reinforcement

Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad

Flexible High-Temperature MoS 2 Field-Effect Transistors and Logic Gates

2D Materials As Semiconducting Gate for Field-Effect Transistors with Inherent Over-Voltage Protection and Boosted ON-current

On-Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P-Channel Field-Effect Transistors