Abstract:Field-effect transistors (FETs) fabricated with monolayer (ML) molybdenum disulfide (MoS2) exhibit great potential as a promising candidate for next-generation nanoelectronic devices. However, the practical application of ML-MoS2-based transistors is severely restricted by the high contact resistance and poor current-delivery capability between the common metals and ML-MoS2 at present. Here, through the systematical screening of the contact performance between metals (Sc, In, Ag, Al, Ti, Mo, W, Cu, Au, Ni, Pd, and Pt) and ML MX2 (M = Mo, W; X = S, Se, Te), we proposed a FET showing a remarkably high on-state current density of similar to 103 mu A/mu m by using Mo-MoS2 as the electrode, which is, to the best of our knowledge, the highest record so far reported in FETs based on MX2. The Mo-MoS2 FETs also show small subthreshold swings impending the theoretical limit (60 mV/dec), extremely small delay time, and power-delay product by taking advantage of a dual gate and underlap configuration. Furthermore, the performance upper limits are comparable with the best existing sub-10 nm advanced silicon FETs and satisfy the requirement of the International Technology Roadmap for Semiconductor (ITRS) in the next decade. The outstanding properties of the Mo-MoS2 electrode demonstrate its huge potential for maintaining the high performance or low power of devices when the feature size of FETs keeps reducing for the next-generation nanoscale devices. devices.

On-Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P-Channel Field-Effect Transistors

On‐Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors (adv. Electron. Mater. 10/2022)

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

High-performance Heterogeneous Complementary Inverters Based on N-Channel MoS2 and P-Channel SWCNT Transistors

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown N-Mos2 and P-Mote2.

High-Performance Complementary Circuits from Two-Dimensional MoTe 2

High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS 2 and p‐MoTe 2

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Symmetric Complementary Logic Inverter Using Integrated Black Phosphorus and MoS2 Transistors

Performance Upper Limit of Sub-10 nm Monolayer MoS<sub>2</sub> Transistors with MoS<sub>2</sub>-Mo Electrodes

Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation

Integration of 3-level MoS$_2$ multi-bridge channel FET with 2D layered contact and gate dielectric

Realizing Wafer‐Scale and Low‐Voltage Operation MoS2 Transistors Via Electrolyte Gating

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures

P-type polar transition of chemically doped multilayer MoS2 transistor

Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors

High-Performance MoS 2 Complementary Inverter Prepared by Oxygen Plasma Doping

Monolithic 3D Integration of Vertically Stacked CMOS Devices and Circuits with High-Mobility Atomic-Layer-Deposited In2O3 N-Fet and Polycrystalline Si P-Fet: Achieving Large Noise Margin and High Voltage Gain of 134 V/V

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

High Current Nb-Doped P-Channel MoS₂ Field-Effect Transistor Using Pt Contact