Abstract:The short‐channel tunneling transistor comprising all 2D components is developed, exhibiting high switching performance due to the energy band modulation of vertical heterojunction through the dual‐gates. Leveraging the unique short‐channel and tunneling mechanism, it can circumvent the general issues of voltage spikes and long reverse recovery time, realizing an access to high‐frequency integrated circuits (IC) interface. With continuous size scaling, the surface dangling bonds and short‐channel effects will degrade silicon based transistor performance. Thus, it is of great importance to seek new channel materials and transistor architectures to further continue Moore's law. Herein, a new ultra‐thin short‐channel tunneling transistor is developed comprising all 2D‐ components. Distinct from usual 2D planar transistor, this device is configured with vertical MoS2/WSe2 junction and in‐plane WSe2 channel, the switch states are realized by the gate‐regulated barrier height of heterojunction, enabling the transition of transport mechanism between thermionic‐emission and tunneling. Under dual‐gate configuration, the transistor exhibits high performance with drive current of 4.58 μA, on/off ratio of 4 × 107, subthreshold swing (SS) of 97 mV decade−1 and drain‐induced barrier lowering (DIBL) of 12 mV V−1, that can meet the requirement of logical applications in integrated circuits (IC). Taking advantage of the high‐speed tunneling current and unique short‐channel architecture, the device overcomes the issues of voltage spikes and long reverse recovery time that exist in usual electric components, and thus gains an access to the IC interface. This work provides a proof‐of‐concept transistor architecture relying on dual‐gate modulation, opening up a promising perspective for next generation low‐power, high‐density, and large‐scale IC technologies.

On‐Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors (adv. Electron. Mater. 10/2022)

On-Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P-Channel Field-Effect Transistors

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

High-performance Heterogeneous Complementary Inverters Based on N-Channel MoS2 and P-Channel SWCNT Transistors

High-Current Gain Two-Dimensional MoS<sub>2</sub>-Base Hot-Electron Transistors

High-current Gain Two-dimensional MoS2-base Hot-electron Transistors.

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown N-Mos2 and P-Mote2.

High-Performance Complementary Circuits from Two-Dimensional MoTe 2

High‐Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD‐Grown n‐MoS 2 and p‐MoTe 2

High performance and reliability Ge channel CMOS with a MoS 2 capping layer

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Ultra‐Steep‐Slope High‐Gain MoS <sub>2</sub> Transistors with Atomic Threshold‐Switching Gate

High Performance Amplifier Element Realization Via MoS2/GaTe Heterostructures

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.

High Current Nb-Doped P-Channel MoS₂ Field-Effect Transistor Using Pt Contact

2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

Realization of High Current Gain for Van der Waals MoS2/WSe2/MoS2 Bipolar Junction Transistor

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact