Abstract:Molybdenum disulfide (MoS2), a member of the transition-metal dichalcogenides (TMDs) family, is a semiconducting layered matierial consisting of two atomic layers of S atoms and Mo atoms. Comparing with semimetal graphene, its relatively large band gap makes MoS2 more suitable for applications in logic cricuit. Besides, strong spin orbit coupling and special symmetric structure give MoS2 many intriguing physical and chemical properties. However, contacts between metals and MoS2 remain a critical issue which hinders not only the investigation of the intrinsic properties of MoS2 but also its applications. Therefore, it is urgent to find the technique that can improve the contact condition between metal and MoS2. In this work, using MoO3/Au as the electrode of MoS2 based field effect transistors (FETs), we obtained N-type MoS2 FETs with improved contact conditions. The transport properties of these devices at different temperatures is also investigated. We demonstrated that the Schottky contact of the MoS2 FETs can be well improved by the interlayer MoO3 between MoS2 and metal electrodes: for device with 2 nm thick channel MoS2, the room temperature mobility can be as high as 25 cm2 V–1 s–1, 16 times higher than device without MoO3 contact; for device with 8 nm thick channel MoS2, the highest value of the low temperature mobility is as high as 100 cm2 V–1 s–1. Therefore, we extracted the intrinsic low temperature property of MoS2 FETs: the transport property of few layer MoS2 devices is dominated by the scattering of charge carriers from defect or charge traps; such scattering is weakened as the carrier density increases and screening is improved. The technique demonstrated in this work can also be applied to other TMDs field effect devices.

High Current Nb-Doped P-Channel MoS₂ Field-Effect Transistor Using Pt Contact

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Performance Upper Limit of Sub-10 nm Monolayer MoS<sub>2</sub> Transistors with MoS<sub>2</sub>-Mo Electrodes

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

1T Phase As an Efficient Hole Injection Layer to TMDs Transistors: a Universal Approach to Achieve P-Type Contacts

High Performance MoS2 N-Channel MOSFFTs

MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

P-type polar transition of chemically doped multilayer MoS2 transistor

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Transport Properties Of Moo3 Contacted Few-Layer Mos2 N-Type Field-Effect Transistor

High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)

Controlled Fabrication of Metallic MoO2 Nanosheets Towards High-Performance P-Type 2D Transistors.

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

&Lt;inline-Formula> &Lt;tex-Math Notation="tex">${\rm MoS}_{2}$ &Lt;/tex-Math></inline-formula> Field-Effect Transistors with Graphene/Metal Heterocontacts

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

On-Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P-Channel Field-Effect Transistors

High On-Current 2D nFET of 390 μA/μm at VDS = 1V using Monolayer CVD MoS2 without Intentional Doping

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

P-type Ohmic contacts of MBenes with MoS2 for nanodevices and logic circuits

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application