Abstract:Molybdenum disulfide (MoS2), a member of the transition-metal dichalcogenides (TMDs) family, is a semiconducting layered matierial consisting of two atomic layers of S atoms and Mo atoms. Comparing with semimetal graphene, its relatively large band gap makes MoS2 more suitable for applications in logic cricuit. Besides, strong spin orbit coupling and special symmetric structure give MoS2 many intriguing physical and chemical properties. However, contacts between metals and MoS2 remain a critical issue which hinders not only the investigation of the intrinsic properties of MoS2 but also its applications. Therefore, it is urgent to find the technique that can improve the contact condition between metal and MoS2. In this work, using MoO3/Au as the electrode of MoS2 based field effect transistors (FETs), we obtained N-type MoS2 FETs with improved contact conditions. The transport properties of these devices at different temperatures is also investigated. We demonstrated that the Schottky contact of the MoS2 FETs can be well improved by the interlayer MoO3 between MoS2 and metal electrodes: for device with 2 nm thick channel MoS2, the room temperature mobility can be as high as 25 cm2 V–1 s–1, 16 times higher than device without MoO3 contact; for device with 8 nm thick channel MoS2, the highest value of the low temperature mobility is as high as 100 cm2 V–1 s–1. Therefore, we extracted the intrinsic low temperature property of MoS2 FETs: the transport property of few layer MoS2 devices is dominated by the scattering of charge carriers from defect or charge traps; such scattering is weakened as the carrier density increases and screening is improved. The technique demonstrated in this work can also be applied to other TMDs field effect devices.

P-type Ohmic contacts of MBenes with MoS2 for nanodevices and logic circuits

P-type Ohmic contact to MoS2 via binary compound electrodes

1T Phase As an Efficient Hole Injection Layer to TMDs Transistors: a Universal Approach to Achieve P-Type Contacts

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.

Towards Barrier Free Contact to MoS2 Using Graphene Electrodes

Toward barrier free contact to molybdenum disulfide using graphene electrodes.

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

P-type electrical contacts for two-dimensional transition metal dichalcogenides

Electrical contacts to few-layer MoS 2 with phase-engineering and metal intercalation for tuning the contact performance

Tunable Schottky contacts in MSe 2 /NbSe 2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.

Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

Ohmic contacts in MXene/MoSi2N4 heterojunctions

Designing Barrier-Free Metal/MoS 2 Contacts through Electrene Insertion

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

Electrical Contacts in Monolayer MoSi2N4 Transistors

Two-dimensional van der Waals electrical contact to monolayer MoSi$_2$N$_4$

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Modified MXene: Promising Electrode Materials for Constructing Ohmic Contacts with MoS2for Electronic Device Applications