Electrical contacts to few-layer MoS 2 with phase-engineering and metal intercalation for tuning the contact performance

Wenjun Zhang,Qian Wang,Liang Hu,Jiansheng Wu,Xingqiang Shi

DOI: https://doi.org/10.1063/5.0046338

IF: 4.304

2021-05-14

The Journal of Chemical Physics

Abstract:Due to Fermi-level pinning in metal–two-dimensional MoS₂ junctions, improving the performance of MoS₂-based electrical devices is still under extensive study. The device performance of few-layer MoS₂ depends strongly on the number of layers. In this work, via density-functional theory calculations, a comprehensive understanding from the atomistic view was reached for the interlayer interaction between metal and few-layer MoS₂ with phase-engineering and intercalation doping, which are helpful for improving the contact performance. These two methods are probed to tune the performance of few-layer MoS₂-based field-effect transistors, and both of them can tune the Schottky barrier height. Phase-engineering, which means that the MoS₂ layer in contact with metal is converted to the T phase, can transform the Schottky barrier from <i>n</i>- to <i>p</i>-type. Intercalation doping, which takes advantage of annealing and results in metal atom interaction in between MoS₂ layers, makes the MoS₂ layers become quasi-freestanding and converts the indirect bandgap into direct bandgap. Our atomistic insights help improve the performance of few-layer MoS₂-based electronic devices.

chemistry, physical,physics, atomic, molecular & chemical