Abstract:Two-dimensional (2D) materials with the atomically thin thickness have attracted great interest in the postMoore's Law era because of their tremendous potential to continue transistor downscaling and offered advances in device performance at the atomic limit. However, the metal-semi-conductor contact is the bottleneck in field-effect transistors (FETs) integrating 2D semiconductors as channel materials. A robust and tunable doping method at the source and drain region of 2D transistors to minimize the contact resistance is highly sought after. Here we report a stable carrier doping method via the mild covalent grafting of maleimides on the surface of 2D transition metal dichalcogenides. The chemisorbed interaction contributes to the efficient carrier doping without degrading the high-performance carrier transport. Density functional theory results further illustrate that the molecular functionalization leads to the mild hybridization and the negligible impact on the conduction bands of monolayer MoS2, avoiding the random scattering from the dopants. Differently from reported molecular treatments, our strategy displays high thermal stability (above 300 degrees C) and it is compatible with micro/nano processing technology. The contact resistance of MoS2 FETs can be greatly reduced by similar to 12 times after molecular functionalization. The Schottky barrier of 44 meV is achieved on monolayer MoS2 FETs, demonstrating efficient charge injection between metal and 2D semiconductor. The mild covalent functionalization of molecules on 2D semiconductors represents a powerful strategy to perform the carrier doping and the device optimization.

High Performance MoS2 N-Channel MOSFFTs

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)

Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates

Electrical Performance Of Multilayer Mos2 Transistors On High-Kappa Al2o3 Coated Si Substrates

Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

High Current Nb-Doped P-Channel MoS₂ Field-Effect Transistor Using Pt Contact

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Remote N-2 Plasma Treatment to Deposit Ultrathin High-K Dielectric As Tunneling Contact Layer for Single-Layer MoS2 MOSFET

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Enhanced Electrical Properties Of Lithography-Free Fabricated Mos2 Field Effect Transistors With Chromium Contacts

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation

Enhancement of Carrier Mobility in Mos2 Field Effect Transistors by A Sio2 Protective Layer

Enhanced Electrical Properties of Lithography-Free Fabricated MoS<sub>2</sub> Field Effect Transistors with Chromium Contacts