Abstract:Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultane-ously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabri-cating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the defor-mation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

High-current Gain Two-dimensional MoS2-base Hot-electron Transistors.

High-Current Gain Two-Dimensional MoS<sub>2</sub>-Base Hot-Electron Transistors

Vertical graphene-base hot-electron transistor.

Approaching the Collection Limit in Hot Electron Transistors with Ambipolar Hot Carrier Transport

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

All-Two-Dimensional-Material Hot Electron Transistor

MoS2/Si Tunnel Diodes Based on Comprehensive Transfer Technique

Efficient hot-electron extraction in two-dimensional semiconductor heterostructures by ultrafast resonant transfer

Two-Dimensional Cold Electron Transport for Steep-Slope Transistors

Low Sub-Threshold Swing Realization with Contacts of Graphene/h-Bn/mos2 Heterostructures in MoS2 Transistors

Realization of High Current Gain for Van der Waals MoS2/WSe2/MoS2 Bipolar Junction Transistor

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

On‐Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors (adv. Electron. Mater. 10/2022)

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

A hot-emitter transistor based on stimulated emission of heated carriers

High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.

Ultra‐Steep‐Slope High‐Gain MoS <sub>2</sub> Transistors with Atomic Threshold‐Switching Gate

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

High Performance Amplifier Element Realization Via MoS2/GaTe Heterostructures

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications