Abstract:A triboelectric potential powered vertical field‐effect transistor (tribotronic vertical field‐effect transistor or graphene barristor) is demonstrated, offering an effective way to modulate the Schottky barrier of vertical van der Waals heterostructure by mechanical displacement. Graphene has attracted considerable interest for next‐generation electronics. However, the absence of natural bandgap has limited the current on/off ratio of graphene‐based transistors. Vertical integration of 2D heterostructures offers a promising approach to address this challenge, enabling high‐current‐density vertical field‐effect transistor (VFET) with large on/off ratio. Here, a triboelectric potential‐powered VFET with a vertical stacked graphene/MoS2 heterostructure and a sliding‐mode triboelectric nanogenerator (TENG) coupled with gate dielectrics are proposed. The tribotronic VFET has an ultrashort channel length in vertical direction, exhibiting excellent current driving capability with an ultrahigh on‐state current density of 950 A cm−2 and a good current on/off ratio of 630. It also demonstrates reconfigurable diode behavior with a rectification ratio over 102. Temperature‐dependent studies are applied to tribotronic devices for the first time, indicating an effective modulation on the Schottky barrier height of 150 meV by the triboelectric potential. A green LED pixel is driven by the tribotronic VFET as a demonstration to work as a tactile interactive light‐emitting device. The demonstrated tribotronic vertical device offers a promising strategy for integrating various 2D layered materials with TENG in vertical direction, enabling 3D integration of low‐power and interactive devices for next‐generation electronics.

Vertical graphene-base hot-electron transistor.

A Vertical Silicon-Graphene-germanium Transistor.

High-Current Gain Two-Dimensional MoS<sub>2</sub>-Base Hot-Electron Transistors

High-current Gain Two-dimensional MoS2-base Hot-electron Transistors.

All-Two-Dimensional-Material Hot Electron Transistor

GaN/Gr (2D)/Si (3D) Combined High-Performance Hot Electron Transistors

Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors

Approaching the Collection Limit in Hot Electron Transistors with Ambipolar Hot Carrier Transport

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Resonant plasmonic terahertz detection in vertical graphene-base hot-electron transistors

Computational Study of Graphene-Based Vertical Field Effect Transistor

Field‐effect Thermoelectric Hotspot in Monolayer Graphene Transistor

Vertical Transistors: Analog Circuit Applications Based on Ambipolar Graphene/MoTe2 Vertical Transistors (Adv. Electron. Mater. 3/2018)

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Simulation And Design of a Vertical Gallium Nitride JFET with Dual Lateral Heterojunction Channels

GaN Based Vertical Transistors on GaN Substrates

Tribotronic Vertical Field‐Effect Transistor Based on van der Waals Heterostructures

Barrier inhomogeneities at vertically stacked graphene-based heterostructures.