Abstract:Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultane-ously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabri-cating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the defor-mation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures

MoS2/Si Tunnel Diodes Based on Comprehensive Transfer Technique

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

Exotic Tunneling Resistance in Graphene/topological Insulator Vertical Junction

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Systhesis and Devices of Graphene

High On-State Current P-Type Tunnel Effect Transistor Based on Doping Modulation

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Vertical WS2/SnS2 Van Der Waals Heterostructure for Tunneling Transistors.

High-frequency self-aligned graphene transistors with transferred gate stacks

Vertical graphene-base hot-electron transistor.

Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors

Scalable Fabrication of High Performance Graphene FETs with Self-Aligned Buried Gates

Computational Study of Graphene-Based Vertical Field Effect Transistor

2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement

Reconfigurable Tunneling Transistors Heterostructured by an Individual Carbon Nanotube and MoS2

Vertical SnS 2 /si Heterostructure for Tunnel Diodes

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures