Abstract:Tunneling field-effect transistors (TFETs) arouse great enthusiasm for energy-efficient switching devices attributed to their steep subthreshold swing (SS), yet their low on-state currents (I-on) block the practical application. We study the possibility of lifting I-on for the case of GeS-based TFETs with electrode optimization using the ab initio quantum transport simulation. An apparent promotion on I-on to an amplitude of 270-410% is achieved for the optimal GeS HetJ-TFETs compared with the unstrained ML GeS TFET, where 23-58% promotion is contributed from the vdWH electrode and the left 42-77% is from the induced strain. I-on of 463 and 878 mu A/mu m of the optimal p-type 10-nm-L-g GeS HetJ-TFETs almost meet the International Roadmap for Device and Systems (IRDS) goals for both low-power (LP) and high-performance (HP) devices for the year 2028. Specifically, the p-type 10-nm-L-g GeS HetJ-TFETs possess the highest I-on(LP) and I-on(HP) when I-leak < 10(-6) mu A/mu m compared with other 2D TFETs despite the material type and device architecture and own superior energy efficiency compared with 2D MOSFETs. The remarkable promotion of I-on attributes to the narrower bandgap and larger density of states of the vdWH electrode. Our findings will promote future development for 2D HetJ-TFETs.

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