Abstract:Tunnel field-effect transistors (TFETs) are promising for use in ultralow-power applications owing to their distinct band-to-band tunneling operation. However, the ON-state current of these Si-based tunnel devices is considerably lower than that of MOSFETs. Furthermore, a high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> dielectric is used as a gate insulator or spacer to increase the TFET’s tunneling field strength; this usually causes fringe-induced barrier lowering and deterioration of its subthreshold characteristics. Here, in this paper, a gate field plate TFET (GFP-TFET) structure is proposed to enhance the driving current and suppress the current kink induced by fringe-induced barrier lowering. A detailed investigation into the effects of a gate field plate on TFET performance was conducted with the help of extensive device simulations. The gate oxide and gate field plate oxide could be used to tailor the electric field lines to increase the electric field in the tunnel junction. Meanwhile, the fringing field concentration was reduced by using a metal with a relatively high work function as the field plate electrode. Thus, the electric field strength decreased near the gate edge and increased in the channel. The GFP-TFET exhibited high driving current and low subthreshold characteristics at the cost of a reduction in cutoff frequency. A GFP-TFET structure with optimized parameters had a <inline-formula> <tex-math notation="LaTeX">$10^{3}\times $ </tex-math></inline-formula> higher ON-state current compared with a normal silicon tunnel FET. The minimum subthreshold swing decreased from 146.3 to 21.4 mV/dec and the ON/OFF current ratio increased from <inline-formula> <tex-math notation="LaTeX">$10^{7}$ </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">$10^{13}$ </tex-math></inline-formula> compared with a normal TFET.

A Comb-Gate Silicon Tunneling Field Effect Transistor with Improved On-State Current

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Germanium-source L-shaped TFET with dual in-line tunneling junction

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Multi-state Tunnel Field Effect Transistor Based on Face Tunneling with Gate-Source Overlap

High On-State Current P-Type Tunnel Effect Transistor Based on Doping Modulation

High performance tunnel field-effect transistor by gate and source engineering.

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Current Enhanced PNPN Tunnel Field-Effect Transistor with L-shaped Gate

Gate Field Plate Structure for Subthreshold Swing Improvement of Si Line-Tunneling FETs

A Tunnel-Induced Injection Field-Effect Transistor with Steep Subthreshold Slope and High On-off Current Ratio

Design Optimization of a Silicon-Germanium Heterojunction Negative Capacitance Gate-All-Around Tunneling Field Effect Transistor based on a Simulation Study

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio