Abstract:Tunnel FET (TFET) has attracted much attention as one of promising candidates of MOSFET for low power applications due to its capability of sub-60mV/dec subthreshold slope (SS) at room temperature [1]. It has a gated p-i-n structure switched by band-to-band tunneling (BTBT) mechanism. However, it is difficult to form abrupt source doping profile in the experiments for sharp band bending at the junction, resulting in relatively large SS of experimental demonstrations compared with ideally theoretical expectations. Another critical issue is that the on current (ION) is relatively low, especially for silicon-based TFET. The resulting issues of low ION, including large intrinsic delay and low gain, may also limit its applications. In recent years, most of TFET researchers focused on the methods for SS reduction and the I ON enhancement, including adoption of the small-bandgap materials, heterojunction [2], nanowire structure [3] and advanced annealing technology [4], etc. Mechanism engineering is focused in our research work as a different possible way to solve the TFET issues, not only improving I ON and SS values, but also enhancing comprehensive properties in terms of reduced Miller capacitance [5], immune to the super-linear onset of output characteristics [6] and reduced noise [7], etc.

A Tunnel-Induced Injection Field-Effect Transistor with Steep Subthreshold Slope and High On-off Current Ratio

High On-State Current P-Type Tunnel Effect Transistor Based on Doping Modulation

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

High performance tunnel field-effect transistor by gate and source engineering.

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Performance Improvement of Si Pocket-Tunnel Fet with Steep Subthreshold Slope and High I-On/I-Off Ratio

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High ON Current

Multi-finger Schottky-Barrier tunneling FET with hybrid operation mechanism for steep transition and high on current

A Comb-Gate Silicon Tunneling Field Effect Transistor with Improved On-State Current

Piezoelectric Tunnel FET with a Steep Slope

Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration

Steep Switch with Hybrid Operation Mechanism for Performance Improvement (Invited)

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure