Abstract:We propose a Heterojunction Vertical Tunneling FET and show using self-consistent ballistic quantum transport simulations that it can provide very steep subthreshold swings and high ON current, thereby improving the scalability of Tunnel FETs for high performance. The turn-on in pocket region of the device is dictated by modulation of heterojunction barrier height. The steepness of turn-on is increased because of simultaneous onset of tunneling in the pocket and the region underneath and also due to contribution to current by vertical tunneling in the pocket. These factors can be engineered by tuning heterojunction band offsets.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: How to design a new type of heterojunction vertical band - to - band tunneling field - effect transistor (Heterojunction Vertical Band - to - Band Tunneling Transistor, Hetero - VTFET) to achieve a steeper subthreshold swing (SS) and a higher ON current, thereby improving the scalability of tunneling field - effect transistors (TFETs) in high - performance applications. ### Specific problems: 1. **The problem of excessive subthreshold swing**: Although traditional tunneling field - effect transistors (TFETs) can provide a steeper subthreshold swing (below 60 mV/decade) than classical MOS devices, their tunneling resistance in the ON state is large, which limits their performance improvement. 2. **The problem of insufficient ON current**: The existing TFET structures have a small current in the ON state, which affects their practicality in high - performance applications. ### Solutions: The paper proposes a vertical tunneling field - effect transistor based on heterojunction (Hetero - VTFET) and shows through self - consistent ballistic quantum transport simulations that this structure can significantly improve the subthreshold swing and ON current. Specifically: - **Heterojunction design**: By selecting an appropriate combination of materials (such as InAs and In0.53Ga0.47As), use the heterojunction band offset to regulate the tunneling barrier height, thereby achieving a steeper subthreshold swing. - **Design of the pocket region**: Introduce a highly doped pocket region, which increases the vertical tunneling current, thereby increasing the ON current. - **Simultaneous tunneling mechanism**: By optimizing the band offset, the tunneling in the pocket region and the lower region occurs simultaneously, further enhancing the tunneling effect and reducing the subthreshold swing. ### Results: Through these designs, Hetero - VTFET achieves a minimum subthreshold swing of 16 mV/decade, far below the 62 mV/decade of the traditional homojunction VTFET, and can still maintain a high current level in the ON state. This provides new possibilities for the further development of TFETs in low - power, high - performance applications. ### Summary: The main goal of this paper is to overcome the limitations of existing TFETs in terms of subthreshold swing and ON current by improving the structural design of TFETs, especially by introducing heterojunctions and pocket regions, thereby promoting their application in next - generation electronic devices.

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