Abstract:Tunnel field-effect transistors (TFETs) are promising for use in ultralow-power applications owing to their distinct band-to-band tunneling operation. However, the ON-state current of these Si-based tunnel devices is considerably lower than that of MOSFETs. Furthermore, a high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> dielectric is used as a gate insulator or spacer to increase the TFET’s tunneling field strength; this usually causes fringe-induced barrier lowering and deterioration of its subthreshold characteristics. Here, in this paper, a gate field plate TFET (GFP-TFET) structure is proposed to enhance the driving current and suppress the current kink induced by fringe-induced barrier lowering. A detailed investigation into the effects of a gate field plate on TFET performance was conducted with the help of extensive device simulations. The gate oxide and gate field plate oxide could be used to tailor the electric field lines to increase the electric field in the tunnel junction. Meanwhile, the fringing field concentration was reduced by using a metal with a relatively high work function as the field plate electrode. Thus, the electric field strength decreased near the gate edge and increased in the channel. The GFP-TFET exhibited high driving current and low subthreshold characteristics at the cost of a reduction in cutoff frequency. A GFP-TFET structure with optimized parameters had a <inline-formula> <tex-math notation="LaTeX">$10^{3}\times $ </tex-math></inline-formula> higher ON-state current compared with a normal silicon tunnel FET. The minimum subthreshold swing decreased from 146.3 to 21.4 mV/dec and the ON/OFF current ratio increased from <inline-formula> <tex-math notation="LaTeX">$10^{7}$ </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">$10^{13}$ </tex-math></inline-formula> compared with a normal TFET.

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Germanium-source L-shaped TFET with dual in-line tunneling junction

Multi-state Tunnel Field Effect Transistor Based on Face Tunneling with Gate-Source Overlap

A Comb-Gate Silicon Tunneling Field Effect Transistor with Improved On-State Current

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Gate Field Plate Structure for Subthreshold Swing Improvement of Si Line-Tunneling FETs

High performance tunnel field-effect transistor by gate and source engineering.

A novel Ge based overlapping gate dopingless tunnel FET with high performance

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Heteromaterial Gate Tunnel Field Effect Transistor with Lateral Energy Band Profile Modulation

Design Optimization of a Silicon-Germanium Heterojunction Negative Capacitance Gate-All-Around Tunneling Field Effect Transistor based on a Simulation Study

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Experimental Investigation of a Novel Junction-Modulated Hetero-Layer Tunnel FET with the Striped Gate for Low Power Applications.

A PNPN Tunnel Field-Effect Transistor with High-Kgate and Low-Kfringe Dielectrics

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket

Current Enhanced Double-Gate TFET with Source Pocket and Asymmetric Gate Oxide